H
Harold Dekkers
Researcher at Katholieke Universiteit Leuven
Publications - 70
Citations - 1802
Harold Dekkers is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 20, co-authored 63 publications receiving 1555 citations. Previous affiliations of Harold Dekkers include IMEC.
Papers
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Journal ArticleDOI
Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
G. Agostinelli,Annelies Delabie,Petko Vitanov,Z. Alexieva,Harold Dekkers,S. De Wolf,Guy Beaucarne +6 more
TL;DR: In this paper, surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al 2 O 3 layers on p-type CZ silicon wafers.
Proceedings ArticleDOI
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Hans Mertens,Romain Ritzenthaler,Andriy Hikavyy,Min-Soo Kim,Z. Tao,Kurt Wostyn,S. A. Chew,A. De Keersgieter,G. Mannaert,Erik Rosseel,Tom Schram,Katia Devriendt,Diana Tsvetanova,Harold Dekkers,Steven Demuynck,Adrian Chasin,E. Van Besien,A. Dangol,S. Godny,Bastien Douhard,N. Bosman,O. Richard,J. Geypen,Hugo Bender,Kathy Barla,Dan Mocuta,Naoto Horiguchi,A. V-Y. Thean +27 more
TL;DR: In this paper, gate-all-around (GAA) n-and p-MOSFETs made of 8-nm-diameter vertically stacked horizontal Si nanowires (NWs) were reported.
Proceedings ArticleDOI
Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
Hans Mertens,Romain Ritzenthaler,Adrian Chasin,Tom Schram,Eddy Kunnen,Andriy Hikavyy,Lars-Ake Ragnarsson,Harold Dekkers,T. Hopf,Kurt Wostyn,Katia Devriendt,S. A. Chew,Min-Soo Kim,Y. Kikuchi,Erik Rosseel,G. Mannaert,Stefan Kubicek,Steven Demuynck,A. Dangol,N. Bosman,J. Geypen,Patrick Carolan,Hugo Bender,Kathy Barla,Naoto Horiguchi,Dan Mocuta +25 more
TL;DR: In this paper, the authors report on the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs, with matched threshold voltages (V t, sat ∼ 0.35 V) for N- and P-type devices.
Journal ArticleDOI
Molecular hydrogen formation in hydrogenated silicon nitride
TL;DR: In this paper, the formation of molecular hydrogen (H2) in SiNx:H layers with low mass density is confirmed by Raman spectroscopy, but no H2 is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers.
Journal ArticleDOI
Origin of visible luminescence in hydrogenated amorphous silicon nitride
TL;DR: In this paper, the authors present a detailed investigation on the origin of the room-temperature visible luminescence in hydrogenated amorphous silicon nitride films, using Raman spectroscopy and high-resolution transmission electron microscopy.