H
Helena Gleskova
Researcher at University of Strathclyde
Publications - 115
Citations - 3995
Helena Gleskova is an academic researcher from University of Strathclyde. The author has contributed to research in topics: Thin-film transistor & Amorphous silicon. The author has an hindex of 31, co-authored 114 publications receiving 3811 citations. Previous affiliations of Helena Gleskova include Princeton University.
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Mechanics of rollable and foldable film-on-foil electronics
TL;DR: In this article, the mechanics of film-on-foil transistors on steel and plastic foils have been discussed in the context of thin-film transistors, where the transistors function well after the foils are rolled to small radii of curvature.
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Failure resistance of amorphous silicon transistors under extreme in-plane strain
TL;DR: In this article, the authors applied strain on thin-film transistors (TFTs) made of hydrogenated amorphous silicon on polyimide foil and found that the TFT failed by periodic cracks at a strain of ∼ 0.5%.
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Electrical response of amorphous silicon thin-film transistors under mechanical strain
TL;DR: In this paper, the authors evaluated amorphous silicon thin-film transistors (TFTs) fabricated on polyimide foil under uniaxial compressive or tensile strain.
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Silicon for thin-film transistors
TL;DR: In this paper, the authors summarize the TFT properties and their compatibility with foil substrate materials, and summarize their properties and properties with respect to different modifications of silicon films: amorphous, nanocrystalline and micro-crystalline.
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Mechanics of thin-film transistors and solar cells on flexible substrates
TL;DR: In this article, the elastic deformation of the transistor is correlated with small increase in the electron mobility and cracks start to form when the tensile strain reaches 0.34, and burst formation starts and causes an abrupt change in the transistor performance.