H
Hiroshi Yamaguchi
Researcher at Nippon Telegraph and Telephone
Publications - 571
Citations - 14406
Hiroshi Yamaguchi is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Resonator & Molecular beam epitaxy. The author has an hindex of 47, co-authored 519 publications receiving 13016 citations. Previous affiliations of Hiroshi Yamaguchi include Osaka University & Imperial College London.
Papers
More filters
Journal ArticleDOI
Growth of GaAs/ErAs/GaAs structures by migration‐enhanced epitaxy
TL;DR: In this article, an ErAs/GaAs superlattice is fabricated by migrationenhanced epitaxy at 320'°C and satellite peaks are observed in an x-ray rocking curve.
Journal ArticleDOI
Imaging of layer by layer growth processes during molecular beam epitaxy of GaAs on (111)A substrates by scanning electron microscopy
TL;DR: In this paper, the authors used a scanning electron microscope-molecular beam epitaxy system with a GaAs substrate that dramatically improves the flatness of the growing surface, making possible detailed observations of the near-equilibrium growth processes of island nucleation, coalescence, and step motion.
Journal ArticleDOI
Demonstration of Multiple Internal Resonances in a Microelectromechanical Self-Sustained Oscillator
TL;DR: In this article, the dynamics of a microelectromechanical self-sustained oscillator supporting multiple resonating and interacting modes are investigated, whereby 1:2, 1:3, and 2:1 internal resonances occur.
Journal ArticleDOI
Broadband reconfigurable logic gates in phonon waveguides
TL;DR: In this article, the phonon waveguide architecture is used to execute multiple binary mechanical logic gates in parallel, via frequency division multiplexing in a two-octave-wide phonon transmission band, where each gate can be independently reconfigured.
Journal ArticleDOI
Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
TL;DR: In this article, the influence of an As-free atmosphere during Ga deposition in migration-enhanced epitaxy on step-flow growth is examined, and the change in specular peak intensity is observed during the growth of GaAs, AlGaAs, and InAs.