H
Hiroshi Yamaguchi
Researcher at Nippon Telegraph and Telephone
Publications - 571
Citations - 14406
Hiroshi Yamaguchi is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Resonator & Molecular beam epitaxy. The author has an hindex of 47, co-authored 519 publications receiving 13016 citations. Previous affiliations of Hiroshi Yamaguchi include Osaka University & Imperial College London.
Papers
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As desorption from GaAs and AlAs surfaces studied by improved high‐energy electron reflectivity measurements
TL;DR: In this paper, the desorption of As from GaAs (001), (111)B, and AlAs(001) was studied by measuring the electron beam current reflected from these surfaces.
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Step motion and As desorption on InAs(001) surfaces observed by scanning tunneling microscopy.
TL;DR: Results differ from those for GaAs surfaces and indicate strong lateral interaction in (2×4) structures on InAs, and domains with dark contrast (As-desorbed regions) are clearly observed at higher temperatures.
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Limitations of Angiotensin-Converting Enzyme Inhibitor in Restenosis of a Deep Arterial Injury Model
TL;DR: The type of arterial injury seems to determine the effectiveness of CLZ, as CLZ markedly decreased neointimal hyperplasia in mild injury and failed to reduce intimal area in deep injury.
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Three-dimensional alignment with 10nm order accuracy in electron-beam lithography on rotated sample for three-dimensional nanofabrication
Kenji Yamazaki,Hiroshi Yamaguchi +1 more
TL;DR: In this article, a 3D alignment with 10nm order accuracy in 3D electron-beam (EB) lithography has been achieved by means of highly accurate rotation control and mark location using the transmission electron signal.
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Room temperature piezoelectric displacement detection via a silicon field effect transistor
TL;DR: In this paper, an electromechanical oscillator embedded with a two dimensional electron gas is capacitively coupled to a silicon field effect transistor (Si-FET) for room temperature detection.