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Hiroshi Yamaguchi

Researcher at Nippon Telegraph and Telephone

Publications -  571
Citations -  14406

Hiroshi Yamaguchi is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Resonator & Molecular beam epitaxy. The author has an hindex of 47, co-authored 519 publications receiving 13016 citations. Previous affiliations of Hiroshi Yamaguchi include Osaka University & Imperial College London.

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Field-Effect Transistor with Deposited Graphite Thin Film

TL;DR: In this paper, the field effect of graphite-rich carbon nanocrystallite thin films deposited by electron cyclotron resonance sputtering was investigated, and an appreciable ambipolar field effect was observed at the film edge where the thickness was vanishing.
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Electron beam lithography on vertical side faces of micrometer-order Si block

TL;DR: In this paper, a 3D electron beam (EB) nanolithography on resist films coated on vertical side faces of Si blocks with micrometer-order size is demonstrated by combining the original three-dimensional EB writing technique with a newly developed low-viscosity resist solution.
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Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

TL;DR: In this paper, the authors demonstrate a tunnel diode composed of a vertical MoS2/SiO2//Si heterostructure, where a thin gate oxide allows tunneling current to flow between the n-type MoS 2 layers and p-type Si channel.
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Use of adenosine (5')polyphospho(5')pyridoxals to study the substrate-binding region of glutathione synthetase from Escherichia coli B.

TL;DR: Results demonstrate the bivalent binding of AP4-PL lying across the gamma-glutamylcysteine- and ATP-binding sites of the glutathione synthetase.
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Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation

TL;DR: The quality factor of GaAs microcantilevers consisting of Si-doped and undoped GaAs layers can be controlled by tuning the wavelength of the incident laser used for carrier excitation as discussed by the authors.