H
Hiroshi Yamaguchi
Researcher at Nippon Telegraph and Telephone
Publications - 571
Citations - 14406
Hiroshi Yamaguchi is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Resonator & Molecular beam epitaxy. The author has an hindex of 47, co-authored 519 publications receiving 13016 citations. Previous affiliations of Hiroshi Yamaguchi include Osaka University & Imperial College London.
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Novel Fabrication Technique of Suspended Nanowire Devices for Nanomechanical Applications
Wataru Tomita,Wataru Tomita,Satoshi Sasaki,Kouta Tateno,Hajime Okamoto,Hiroshi Yamaguchi,Hiroshi Yamaguchi +6 more
TL;DR: In this article, the authors used inkjet printing for precise assembling of nanowire-dispersed droplets and by forming a PMGI sacrificial layer for suspending nanowires.
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A Case of Thyroid Crisis With Worsening Jaundice Despite Improvements in Heart Failure
Hiroshi Yamaguchi,Ayaka Takahashi,Atsuhisa Shirakami,Norihito Kageyama,Ken-ichi Kitazoe,Hiroyuki Fujinaga +5 more
TL;DR: It is demonstrated that obtaining a detailed medical history and a careful examination of the clinical course were useful for reaching the differential diagnosis of severe jaundice and achieving steady improvements in this serious medical condition.
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In situ observation of MEE GaAs growth using scanning electron microscopy
TL;DR: In this article, the authors used in situ scanning electron microscopy (SEM) for real-time observation of migration enhanced epitaxy (MEE) processes and confirmed enhancement of surface atom migration in MEE.
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Unified model for first-order transition and electrical properties of InAs (001) surfaces based on atom-resolved scanning tunneling microscopy imaging
TL;DR: In this article, a unified model that explains two differences between InAs and GaAs (001) surfaces, phase transition and electrical properties, is proposed based on atom-resolved images obtained by scanning tunneling microscopy.
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InAs/GaAs (111)A heteroepitaxial systems
TL;DR: In this article, structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy were studied. And the fundamental properties and applications of this unique heteroepitaxial system were reviewed.