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Hiroshi Yamaguchi

Researcher at Nippon Telegraph and Telephone

Publications -  571
Citations -  14406

Hiroshi Yamaguchi is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Resonator & Molecular beam epitaxy. The author has an hindex of 47, co-authored 519 publications receiving 13016 citations. Previous affiliations of Hiroshi Yamaguchi include Osaka University & Imperial College London.

Papers
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Impact of space-energy correlation on variable range hopping in a transistor.

TL;DR: Hopping conduction in transistors, i.e., under a transverse electric field, is addressed using percolation theory with a space-energy correlation in the density of states of the impurity band using a formula which describes the emergence of a specific variable range hopping in the high field case.
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Radiation hardness study for the COMET Phase-I electronics

TL;DR: In this article, the authors evaluated the radiation hardness of commercial electronic components and found that voltage regulators, ADCs, DACs, and several other components were found to have enough tolerance to both gamma-ray and neutron irradiation at the level they require.
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End-point detection using focused ion beam-excited photoemissions in milling deep small holes in large scale integrated circuit structures

TL;DR: In this paper, an experimental instrument was made for the end-point detection of a deep small hole milled in large scale integrated circuit using focused ion beam (FIB) for detecting a very weak photoemission.
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Near-field cavity optomechanical coupling in a compound semiconductor nanowire

TL;DR: In this paper, the authors demonstrate cavity optomechanical coupling of a nanowire mechanical resonator to an optical microsphere through near-field evanescent gradient forces and fine-tuning of resonance properties.
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Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells

TL;DR: In this paper, the authors measured photoluminescence spectra of near-surface quantum wells and showed that the luminescence from the quantum well with an As-rich (2\ifmmode\times\else\texttimes\fi{}4) surface is stronger than that with a Ga-rich surface.