Jun Luo

TL;DR: In this article, the structural stability and magnetic properties of SmCo7−xGax compounds using powder x-ray diffraction and magnetic measurements were studied using Ga atom occupation.

TL;DR: In this article, a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet/heavy metal structures on a ferroelectric (1- ${x}$ ) [Pb(Mg1/3Nb2/3)O3]- x PbTiO3] (PMN-PT) substrate using current-induced spin-orbit torque.

TL;DR: The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS) technology to the sub-21-nm technology node is facing great challenges, and innovative technologies such as metal gate/high-k dielectric integration, source/drain engineering, mobility enhancement technology, new device architectures, and enhanced quasiballistic transport channels serve as possible solutions for nanoscaled CMOS.

TL;DR: In this article, the formation of ultrathin silicide films of Ni1-xPtx at 450-850 degrees C was reported and polycrystalline NiSi films formed and agglomerated at lower temperatures.

TL;DR: In this paper, the transistor is described as an active area, a gate stack, a primary spacer, and source/drain regions, where the source/drains are embedded in the active area and self-aligned with opposite sides of the primary Spacer.