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Hongming Weng

Researcher at Chinese Academy of Sciences

Publications -  327
Citations -  32174

Hongming Weng is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Topological insulator & Weyl semimetal. The author has an hindex of 68, co-authored 270 publications receiving 26093 citations. Previous affiliations of Hongming Weng include Center for Excellence in Education & Japan Advanced Institute of Science and Technology.

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Exploration and prediction of topological electronic materials based on first-principles calculations

TL;DR: In this article, the role of first-principles calculations in the selection of topological insulators is reviewed with a focus on the role played by the Wilson loop method for determining topological invariants.
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Emergence of topological bands on the surface of ZrSnTe crystal

TL;DR: By using angle-resolved photoemission spectroscopy combined with first-principles calculations, the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of the topological insulator (TI) state, although such a TI state is defined with a curved Fermi level instead of a global band gap as mentioned in this paper.
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Topological Nodal States in Circuit Lattice.

TL;DR: In this paper, a scheme to realize topological nodal states with a three-dimensional periodic inductor-capacitor (LC) circuit lattice, where the topologically nodal line state and Weyl state can be achieved by tuning the parameters of inductors and capacitors, was introduced.
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Quantum anomalous Hall effect and related topological electronic states

TL;DR: In this article, a theoretical review on the Berry phase mechanism and related topological electronic states in terms of various topological invariants are given with focus on the anomalous Hall effect and Chern insulators.
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Quantum spin Hall effect in two-dimensional transition-metal dichalcogenide haeckelites

TL;DR: In this article, a family of single-layer 2D transition metal dichalcogenide haeckelites was shown to have the quantum spin Hall (QSH) effect at high temperatures.