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Hongming Weng

Researcher at Chinese Academy of Sciences

Publications -  327
Citations -  32174

Hongming Weng is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Topological insulator & Weyl semimetal. The author has an hindex of 68, co-authored 270 publications receiving 26093 citations. Previous affiliations of Hongming Weng include Center for Excellence in Education & Japan Advanced Institute of Science and Technology.

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Observation of open-orbit Fermi surface topology in the extremely large magnetoresistance semimetal MoAs 2

TL;DR: In this article, angle-resolved photoemission spectroscopy combined with first-principles calculations and magnetotransport measurements was performed to perform a comprehensive investigation on ${\mathrm{MoAs}}_{2}$, which is isostructural to the $TmP{n}{2}$ family and also exhibits quadratic XMR.
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First-Principles Study on Cubic Pyrochlore Iridates Y 2 Ir 2 O 7 and Pr 2 Ir 2 O 7

TL;DR: In this article, the all-in, all-out antiferromagnetic (AF) order is stablized by the on-site Coulomb repulsion U > Uc in the LSDA+U scheme, with Uc ∼ 1.1 eV and 1.3 eV for Y2Ir2O7 and Pr2Ir 2O7, respectively.
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Topological metals induced by the Zeeman effect

TL;DR: In this paper, a new topological classification for Zeeman split Fermi surfaces of centrosymmetric metals under external magnetic field is proposed, where the Zeeman effect is described by the momentum-dependent $g$-factor tensor.
Journal Article

Heavy Weyl fermion state in CeRu$_4$Sn$_6$

TL;DR: In this paper, a new type of topological state in strongly corrected condensed matter systems, heavy Weyl fermion state, has been found in a heavy Fermion material CeRu$_4$Sn$_6$, which has no inversion symmetry.
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The electronic structure of NaIrO$_3$, Mott insulator or band insulator?

TL;DR: In this paper, the authors studied the electronic structure and phase diagram in the plane of Coulomb repulsive interaction and spin-orbit coupling (SOC) by using the newly developed local density approximation plus Gutzwiller method, and proposed the metal-insulator transition can be generated by two different physical pictures: renormalized band insulator or Mott insulator regime.