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Hongming Weng

Researcher at Chinese Academy of Sciences

Publications -  327
Citations -  32174

Hongming Weng is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Topological insulator & Weyl semimetal. The author has an hindex of 68, co-authored 270 publications receiving 26093 citations. Previous affiliations of Hongming Weng include Center for Excellence in Education & Japan Advanced Institute of Science and Technology.

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Topological nodal lines and hybrid Weyl nodes in YCoC$_2$

TL;DR: Based on first-principles calculations and effective model analysis, the noncentrosymmetric superconductor YCoC$_2$ in normal state is a topological semimetal as mentioned in this paper.
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The electronic structure of NaIrO3, Mott insulator or band insulator?

TL;DR: In this article, the authors studied the electronic structure and phase diagram in the plane of Coulomb repulsive interaction and spin-orbit coupling by using the newly developed local density approximation plus Gutzwiller method, and proposed that the metal insulator transition can be generated by two different physical pictures: renormalized band insulator or Mott insulator regime.
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Anomalous High-Energy Waterfall-Like Electronic Structure in 5 d Transition Metal Oxide Sr 2 IrO 4 with a Strong Spin-Orbit Coupling

TL;DR: In this paper, the anomalous high energy electronic structure in Sr2IrO4 was studied by taking high-resolution angle-resolved photoemission measurements over a wide energy range, and it was shown that the high-energy electronic structures show unusual nearly-vertical bands that extend over a large energy range.
Posted Content

Topological classification and diagnosis in magnetically ordered electronic materials

TL;DR: In this paper, the authors show that compositions of time-reversal and spatial symmetries protect topological invariants as well as surface states that are distinct from those of all preceding topological states.
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Quantum oscillations and electronic structure in the large-Chern number semimetal RhSn

TL;DR: In this paper, the magnetoresistance, Hall effect, de Haas-van Alphen (dHvA) oscillations, and electronic structures of single-crystal RhSn, which is a typical material of the CoSi family holding a large Chern number.