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Hongming Weng

Researcher at Chinese Academy of Sciences

Publications -  327
Citations -  32174

Hongming Weng is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Topological insulator & Weyl semimetal. The author has an hindex of 68, co-authored 270 publications receiving 26093 citations. Previous affiliations of Hongming Weng include Center for Excellence in Education & Japan Advanced Institute of Science and Technology.

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Electronic structures and topological properties in nickelates $Ln_{n+1}$Ni$_n$O$_{2n+2}$

TL;DR: A hole pocket at A could be introduced by hole doping, which may be related to the observed sign change of the Hall coefficient and the nontrivial band topology in the ferromagnetic two-layer compound La3Ni2O6 is discussed.
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Superconductivity in HfTe5 across weak to strong topological insulator transition induced via pressures.

TL;DR: Pressure induced phase evolution in both electronic & crystal structures for HfTe5 is reported with a culmination of pressure induced superconductivity and provides valuable experimental insights into the evolution on how to proceed from a weak TI precursor across a strong TI to superconductors.
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Quasiparticle interference evidence of the topological Fermi arc states in chiral fermionic semimetal CoSi

TL;DR: In this paper, the authors used scanning tunneling microscopy/spectroscopy to investigate quasiparticle interference at various terminations of a CoSi single crystal and found that the observed surface states exhibit chiral fermion-originated characteristics.
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Electronic structure and optical properties of layered perovskites Sr 2 M O 4 ( M = Ti , V, Cr, and Mn): An ab initio study

TL;DR: In this article, a series of layered perovskites with alternating ferromagnetic plane and the staggered in-plane antiferromagnetic (AFM-II) order were studied by ab initio calculations within generalized gradient approximation (GGA) and computation of the total energy in different magnetic configurations.
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Pressure-induced topological phase transitions and strongly anisotropic magnetoresistance in bulk black phosphorus

TL;DR: In this paper, anisotropic magnetotransport measurement on a noncompound band semiconductor black phosphorus (BP) with magnetic field up to 16 Tesla applied in both perpendicular and parallel to electric current under hydrostatic pressures is reported.