Sunhee Lee

TL;DR: This work presents atomic-scale images and electronic characteristics of these atomically precise devices and the impact of strong vertical and lateral confinement on electron transport and discusses the opportunities ahead for atomic- scale quantum computing architectures.

TL;DR: By embedding phosphorus atoms within a silicon crystal with an average spacing of less than 1 nanometer, this work achieved a diameter-independent resistivity, which demonstrates ohmic scaling to the atomic limit.

TL;DR: The 3-D nanoelectronic MOdeling (NEMO 3D) tool has been developed to address the needs of device physics and material science at the atomic scale of novel nanostructured semiconductors as mentioned in this paper.

TL;DR: In this article, full-quantum device simulations on p-type Si nanowire field effect transistors based on the k · p method, using the k·p parameters tuned against the sp3s* tight-binding method, are carried out.

TL;DR: In this paper, highly confined Si:P-doped layers are studied to explain the disorder in the dopant placements in realistically extended systems. But the authors do not consider the effects of experimentally unavoidable randomness through explicitly disordered dopant placement.