H
Horst Blumtritt
Researcher at Max Planck Society
Publications - 34
Citations - 2176
Horst Blumtritt is an academic researcher from Max Planck Society. The author has contributed to research in topics: Silicon & Avalanche breakdown. The author has an hindex of 17, co-authored 34 publications receiving 2045 citations.
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Journal ArticleDOI
Weyl Semimetals as Hydrogen Evolution Catalysts
Catherine R. Rajamathi,Uttam Gupta,Nitesh Kumar,Hao Yang,Yan Sun,Vicky Süß,Chandra Shekhar,Marcus Schmidt,Horst Blumtritt,Peter Werner,Binghai Yan,Stuart S. P. Parkin,Claudia Felser,C. N. R. Rao +13 more
TL;DR: The study shows that the combination of robust topological surface states and large room temperature carrier mobility, both of which originate from bulk Dirac bands of the Weyl semimetal, is a recipe for high activity HER catalysts.
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Colossal injection of catalyst atoms into silicon nanowires
Oussama Moutanabbir,Dieter Isheim,Horst Blumtritt,Stephan Senz,Eckhard Pippel,David N. Seidman +5 more
TL;DR: An atomic-level, quantitative study of the phenomenon of catalyst dissolution by three-dimensional atom-by-atom mapping of individual Al-catalysed Si nanowires using highly focused ultraviolet-laser-assisted atom-probe tomography.
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Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits
J. Bauer,Jan-Martin Wagner,Andriy Lotnyk,Horst Blumtritt,Bianca Lim,Jan Schmidt,Otwin Breitenstein +6 more
TL;DR: In this paper, a systematic study of these regions by various electron microscopy techniques has shown that the avalanche breakdown occurs at cone-shaped holes, located at dislocations and caused by acidic texture etch.
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High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon.
TL;DR: Investigation of self-organized periodic microstructures (ripples) generated in Si(100) targets after multishot irradiation by approximately 100-fs to 800-nm laser pulses at intensities near the single shot ablation threshold reveals complex structural modifications upon interaction with the laser.
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Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications.
Alexander A. Tonkikh,Elena Voloshina,Peter Werner,Horst Blumtritt,Boris V. Senkovskiy,G. Güntherodt,G. Güntherodt,Stuart S. P. Parkin,Yuriy Dedkov +8 more
TL;DR: This work reports on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE), and demonstrates that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h -BN.