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Hsin Lin

Researcher at Academia Sinica

Publications -  456
Citations -  44819

Hsin Lin is an academic researcher from Academia Sinica. The author has contributed to research in topics: Topological insulator & Weyl semimetal. The author has an hindex of 84, co-authored 444 publications receiving 36929 citations. Previous affiliations of Hsin Lin include National Tsing Hua University & University of California, Los Angeles.

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Observation of a Smoothly Tunable Dirac Point in $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$.

TL;DR: In this article, the authors examined a tunable topological system for a range of 'x' values from 0 to 1, using a combination of Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) and Angle-Resolved Photoemission Spectrograph (ARPES) and showed that the Dirac point shifts linearly with 'x', crossing the Fermi energy near x = 0.7.
Journal ArticleDOI

Topological Dirac Semimetal Phase in Bismuth Based Anode Materials for Sodium-Ion Batteries

TL;DR: In this paper, the electronic structure of Na$_3$Bi was discussed under the SCAN framework and it was shown that the resulting Fermi velocities and δ s−band shift around the $\Gamma$ point are in better agreement with experiments than the corresponding GGA predictions.
Journal ArticleDOI

Application of DEMATEL and ANP in Fruit Bag in Service Design

Hsin Lin, +1 more
TL;DR: In this article , the authors investigated the relationship and importance of evaluation factors for purchasing decisions by taking the kiwifruit bag design as the research object and by using the decision-making laboratory analysis method (DEMATEL).
Proceedings ArticleDOI

Evaluating the potential of ENVISAT/ASAR data in monitoring the poyang lake wetland

TL;DR: In this paper, the authors evaluated the potential of ENVISAT/ASAR (ENVIronment SATellite /Advanced Synthetic Aperture Radar) with multi-incidence angle and multi-polarization for Poyang lake wetland study, a microwave canopy model for herbaceous vegetation was used to simulate the ASAR backscatter from wetland vegetation at two different growing status.

Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms

TL;DR: In this article , the role of reduced dimensionality and disorder on the superconducting properties of thin films was clarified using molecular beam epitaxy to grow wafer-scale high-quality aluminum (Al) nanofilms with normal-state sheet resistance at least 20 times lower than h/(4e2) and investigated their electronic and structural properties ex situ.