H
Hsin Lin
Researcher at Academia Sinica
Publications - 456
Citations - 44819
Hsin Lin is an academic researcher from Academia Sinica. The author has contributed to research in topics: Topological insulator & Weyl semimetal. The author has an hindex of 84, co-authored 444 publications receiving 36929 citations. Previous affiliations of Hsin Lin include National Tsing Hua University & University of California, Los Angeles.
Papers
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Journal ArticleDOI
2D Materials: Large-Area and High-Quality 2D Transition Metal Telluride (Adv. Mater. 3/2017)
Jiadong Zhou,Fucai Liu,Junhao Lin,Junhao Lin,Junhao Lin,Xiangwei Huang,Juan Xia,Bowei Zhang,Qingsheng Zeng,Hong Wang,Chao Zhu,Lin Niu,Xuewen Wang,Wei Fu,Peng Yu,Tay-Rong Chang,Chuang-Han Hsu,Di Wu,Horng-Tay Jeng,Horng-Tay Jeng,Yizhong Huang,Hsin Lin,Zexiang Shen,Changli Yang,Li Lu,Kazu Suenaga,Wu Zhou,Sokrates T. Pantelides,Sokrates T. Pantelides,Guangtong Liu,Zheng Liu,Zheng Liu +31 more
Journal ArticleDOI
Field-induced Metal-Insulator Transition in $\beta $-EuP$_3$
Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia +7 more
TL;DR: In this article, a magnetic-field-driven metal-insulator transition (MIT) was observed in a magnetic semiconductor and the authors ascribe this striking MIT as a field-driven transition from an antiferromagnetic and paramagnetic insulator to a spin-polarized topological semimetal.
Posted Content
A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases
Ilya Belopolski,Su-Yang Xu,Nikesh Koirala,Chang Liu,Guang Bian,Vladimir N. Strocov,Guoqing Chang,Madhab Neupane,Nasser Alidoust,Daniel S. Sanchez,Hao Zheng,Matthew Brahlek,V. A. Rogalev,V. A. Rogalev,Timur K. Kim,Nicholas C. Plumb,Chaoyu Chen,François Bertran,Patrick Le Fèvre,Amina Taleb-Ibrahimi,Maria-Carmen Asensio,Ming Shi,Hsin Lin,Moritz Hoesch,Seongshik Oh,M. Zahid Hasan,M. Zahid Hasan +26 more
TL;DR: In this article, a topological and trivial topological insulator lattice is constructed from alternating thin films of topologically and trivial insulators, and each interface within the heterostructure hosts a set of topological-protected interface states, and by making the layers sufficiently thin, they demonstrate a hybridization of interface states across layers.
Journal ArticleDOI
Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
TL;DR: In this article, first-principles calculations were presented to predict several 3D topological insulators in quaternary chalcogenide compounds which are made of I$_2$-II-IV-VI$_4$ compositions.
Journal ArticleDOI
Effect of hole doping on the electronic structure of Tl2201
TL;DR: In this paper, doping dependencies of the electronic structure and Fermi surface of the monolayer Tl 2− x Cu x Ba 2 CuO 6+ δ (Tl2201) were discussed.