H
Huaxin Lu
Researcher at University of California, San Diego
Publications - 10
Citations - 882
Huaxin Lu is an academic researcher from University of California, San Diego. The author has contributed to research in topics: Subthreshold conduction & MOSFET. The author has an hindex of 8, co-authored 10 publications receiving 845 citations. Previous affiliations of Huaxin Lu include University of California, Los Angeles.
Papers
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A continuous, analytic drain-current model for DG MOSFETs
TL;DR: In this article, a continuous analytic currentvoltage model for double-gate MOSFETs is presented, which is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation.
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An analytic potential model for symmetric and asymmetric DG MOSFETs
Huaxin Lu,Yuan Taur +1 more
TL;DR: In this article, an analytic potential model for long-channel symmetric and asymmetric double-gate MOSFETs is presented, which is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation.
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Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs
TL;DR: Explicit continuous models for both double-gate and surrounding-gate MOSFETs are presented in this paper, which can express the drain current, terminal charge, transconductance, and transcapacitance as explicit functions of applied voltages as well as the structural parameters.
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Analytic Charge Model for Surrounding-Gate MOSFETs
TL;DR: In this article, an analytic charge model for surrounding-gate MOSFETs is presented, which is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition.
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Effect of body doping on double-gate MOSFET characteristics
Huaxin Lu,Wei-Yuan Lu,Yuan Taur +2 more
TL;DR: In this paper, the body doping effect on symmetric double-gate (DG) MOSFETs was investigated using two-dimensional simulation tools, and both n-type and p-type doping effects were investigated.