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Yuan Taur
Researcher at University of California, San Diego
Publications - 197
Citations - 15261
Yuan Taur is an academic researcher from University of California, San Diego. The author has contributed to research in topics: CMOS & MOSFET. The author has an hindex of 53, co-authored 197 publications receiving 14661 citations. Previous affiliations of Yuan Taur include IBM & University of California, Los Angeles.
Papers
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Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
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Device scaling limits of Si MOSFETs and their application dependencies
TL;DR: The end result is that there is no single end point for scaling, but that instead there are many end points, each optimally adapted to its particular applications.
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CMOS scaling into the nanometer regime
Yuan Taur,Douglas A. Buchanan,Wei Chen,David J. Frank,Khalid EzzEldin Ismail,Shih-Hsien Lo,George Anthony Sai-Halasz,R. Viswanathan,Hsing-Jen Wann,Shalom J. Wind,Hon-Sum Philip Wong +10 more
TL;DR: In this article, the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations are discussed, including power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays.
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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.
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CMOS design near the limit of scaling
TL;DR: In this paper, the authors examined the fundamental limiting factors that will ultimately limit CMOS scaling and considered the design issues near the limit of scaling, including electron thermal energy, tunneling leakage through gate oxide, and 2D electrostatic scale length.