Journal ArticleDOI
A continuous, analytic drain-current model for DG MOSFETs
TLDR
In this article, a continuous analytic currentvoltage model for double-gate MOSFETs is presented, which is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation.Abstract:
This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation. The entire I/sub ds/(V/sub g/,V/sub ds/) characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under one continuous function, making it ideally suited for compact modeling. By preserving the proper physics, this model readily depicts "volume inversion" in symmetric DG MOSFETs-a distinctively noncharge-sheet phenomenon that cannot be reproduced by standard charge-sheet based I-V models. It is shown that the I-V curves generated by the analytic model are in complete agreement with two-dimensional numerical simulation results for all ranges of gate and drain voltages.read more
Citations
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Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
Continuous analytic I-V model for surrounding-gate MOSFETs
TL;DR: In this article, a continuous analytic currentvoltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs is presented.
Journal ArticleDOI
Explicit continuous model for long-channel undoped surrounding gate MOSFETs
TL;DR: In this paper, an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs is presented, in which the channel current is written as an explicit function of the applied voltages.
Journal ArticleDOI
An analytic potential model for symmetric and asymmetric DG MOSFETs
Huaxin Lu,Yuan Taur +1 more
TL;DR: In this article, an analytic potential model for long-channel symmetric and asymmetric double-gate MOSFETs is presented, which is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation.
Journal ArticleDOI
A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism
Jean-Michel Sallese,Francois Krummenacher,Fabien Prégaldiny,Christophe Lallement,A. S. Roy,Christian Enz +5 more
TL;DR: In this article, a charge-based model for undoped DG MOSFETs under symmetrical operation is proposed, which aims at giving a comprehensive understanding of the device from the design strategy.
References
More filters
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
Device scaling limits of Si MOSFETs and their application dependencies
TL;DR: The end result is that there is no single end point for scaling, but that instead there are many end points, each optimally adapted to its particular applications.
Journal ArticleDOI
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆
H.C. Pao,Chih-Tang Sah +1 more
TL;DR: In this article, the effects of the diffusion current on the three more important low-frequency dynamic characteristics (the short-circuit gate capacitance, the transconductance, and the drain conductance) are discussed.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.
Journal ArticleDOI
Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
TL;DR: In this paper, a 1D analytic solution for symmetric and asymmetric double-gate MOSFETs was derived by incorporating only the mobile charge term in Poisson's equation.
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Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
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