Journal ArticleDOI
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
John F. Muth,Jae-Hoon Lee,I. K. Shmagin,R. M. Kolbas,H. C. Casey,Bernd Keller,Umesh K. Mishra,Steven P. DenBaars +7 more
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TLDR
In this paper, the absorption coefficient for a 0.4-μm-thick GaN layer grown on a polished sapphire substrate was determined from transmission measurements at room temperature.Abstract:
The absorption coefficient for a 0.4-μm-thick GaN layer grown on a polished sapphire substrate was determined from transmission measurements at room temperature. A strong, well defined exciton peak for the A and B excitons was obtained. The A, B, and C excitonic features are clearly defined at 77 K. At room temperature, an energy gap Eg=3.452±0.001 eV and an exciton binding energy ExA,B=20.4±0.5 meV for the A and B excitons and ExC=23.5±0.5 meV for the C exciton were determined by analysis of the absorption coefficient. From this measured absorption coefficient, together with the detailed balance approach of van Roosbroek and Shockley, the radiative constant B=1.1×10−8 cm3/s was obtained.read more
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Journal ArticleDOI
Luminescence properties of defects in GaN
TL;DR: In this paper, the structural and point defects caused by lattice and stacking mismatch with substrates are discussed. But even the best of the three binaries, InN, AIN and AIN as well as their ternary compounds, contain many structural defects, and these defects notably affect the electrical and optical properties of the host material.
Journal ArticleDOI
Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers.
Fang Qian,Yat Li,Yat Li,Silvija Gradečak,Silvija Gradečak,Hong Gyu Park,Hong Gyu Park,Yajie Dong,Yong Ding,Zhong Lin Wang,Charles M. Lieber +10 more
TL;DR: This work reports the first multi-quantum-well (MQW) core/shell nanowire heterostructures based on well-defined III-nitride materials that enable lasing over a broad range of wavelengths at room temperature and demonstrates a new level of complexity in nanowires, which potentially can yield free-standing injection nanolasers.
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Advancements in perovskite solar cells: photophysics behind the photovoltaics
Tze Chien Sum,Nripan Mathews +1 more
TL;DR: In this paper, the basic working mechanisms of perovskite solar cells in relation to their intrinsic properties and fundamental photophysics are reviewed and the current state-of-the-art and open questions in this maturing field are also highlighted.
References
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Intensity of Optical Absorption by Excitons
TL;DR: In this paper, the intensity of optical absorption close to the edge in semiconductors is examined using band theory together with the effective-mass approximation for the excitons, and the experimental results on O and Ge are in good qualitative agreement with direct forbidden and indirect transitions, respectively.
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Photon-Radiative Recombination of Electrons and Holes in Germanium
TL;DR: The spectral distribution of photon generation for the photon-radiative recombination of electrons and holes in germanium is determined from known optical properties by application of the principle of detailed balance.
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Optical Absorption of Gallium Arsenide Between 0.6 and 2.75 eV
TL;DR: The optical absorption coefficient of high resistivity gallium arsenide has been measured over the range of photon energy 0.6 to 2.75 eV, at temperatures from 10 to 294\ifmmode^\circ\else\textdegree\fi{}K as mentioned in this paper.
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High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
TL;DR: In this paper, high-power blue and violet light-emitting diodes (LEDs) based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates.