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In-jun Hwang
Researcher at Samsung
Publications - 31
Citations - 681
In-jun Hwang is an academic researcher from Samsung. The author has contributed to research in topics: Layer (electronics) & High-electron-mobility transistor. The author has an hindex of 11, co-authored 28 publications receiving 560 citations.
Papers
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Journal ArticleDOI
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
In-jun Hwang,Jongseob Kim,Hyuk Soon Choi,Hyoji Choi,Jaewon Lee,Kyung Yeon Kim,Jong-Bong Park,Jae Cheol Lee,Jong-Bong Ha,Jae-joon Oh,Jai-Kwang Shin,U-In Chung +11 more
TL;DR: In this paper, the impact of gate metals on the threshold voltage and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated.
Journal ArticleDOI
Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
In-jun Hwang,Jongseob Kim,Soogine Chong,Hyun-Sik Choi,Sun-Kyu Hwang,Jae-joon Oh,Jai-Kwang Shin,U-In Chung +7 more
TL;DR: In this paper, the authors studied the current collapse phenomenon during switching in p-GaN gate AlGaN/GaN high-electron-mobility transistors and found that channel hot electrons play a major role in increasing current collapse and that adding a field plate significantly reduces the effect.
Proceedings ArticleDOI
1.6kV, 2.9 mΩ cm 2 normally-off p-GaN HEMT device
In-jun Hwang,Hyoji Choi,Jaewon Lee,Hyuk Soon Choi,Jongseob Kim,Jong-Bong Ha,Chang-Yong Um,Sun-Kyu Hwang,Jae-joon Oh,Jun-Youn Kim,Jai-Kwang Shin,Youngsoo Park,U-In Chung,In-Kyeong Yoo,Kinam Kim +14 more
TL;DR: In this paper, a p-GaN/AlGaN and GaN/GaN based normally-off HEMT device has been demonstrated on a Si substrate and the calculated figure of merit is 921 MV2/Ωcm2, which is the highest value reported for the GaN E-mode devices.
Patent
E-Mode High Electron Mobility Transistors And Methods Of Manufacturing The Same
TL;DR: In this article, an E-mode high electron mobility transistor (HEMT) with a 2Dimensional Electron Gas (2DEG) barrier and a gate electrode is described.
Journal ArticleDOI
Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage
In-jun Hwang,Jae-joon Oh,Hyuk Soon Choi,Jongseob Kim,Hyoji Choi,Joonyong Kim,Soogine Chong,Jai-Kwang Shin,U-In Chung +8 more
TL;DR: In this paper, a bridged p-GaN gate HEMT was proposed to increase the hole depletion width in the pGaN layer at the gate interface, which is one of the key controlling factors of the threshold voltage.