Journal ArticleDOI
Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
In-jun Hwang,Jongseob Kim,Soogine Chong,Hyun-Sik Choi,Sun-Kyu Hwang,Jae-joon Oh,Jai-Kwang Shin,U-In Chung +7 more
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TLDR
In this paper, the authors studied the current collapse phenomenon during switching in p-GaN gate AlGaN/GaN high-electron-mobility transistors and found that channel hot electrons play a major role in increasing current collapse and that adding a field plate significantly reduces the effect.Abstract:
This letter studies the current collapse phenomenon during switching in p-GaN gate AlGaN/GaN high-electron-mobility transistors. It is found that channel hot electrons play a major role in increasing the current collapse and that adding a field plate significantly reduces the effect. By stressing the device with OFF-state pulses of 100 μs× 10 μs with a VGS rise/fall time of 10 ns at Vdc 400 V, compared to the ON-resistance before stress, the ON-resistance was 78 times larger after stress without field plates. With a field plate, it was only 1.8 times larger.read more
Citations
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Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
Dynamic on -State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
TL;DR: In this paper, a dynamic R DSON test board integrating both hard-and soft-switching test circuits is built, and two types of commercial GaN devices are tested and compared under hard and soft switching conditions by doublepulse and multipulse test modes, respectively.
Journal ArticleDOI
Kinetics of Buffer-Related R ON -Increase in GaN-on-Silicon MIS-HEMTs
Davide Bisi,Matteo Meneghini,Fabio Alessio Marino,Denis Marcon,Steve Stoffels,Marleen Van Hove,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this article, an extensive analysis of the charge capture transients induced by OFF-state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown on silicon substrate is presented.
Journal ArticleDOI
Recent Advances in GaN‐Based Power HEMT Devices
Proceedings ArticleDOI
Product-level reliability of GaN devices
TL;DR: This paper explains how hard-switching can form a fundamental switching transition for power management products and shows that the familiar double-pulse tester is a good hard- Switched qualification test vehicle.
References
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Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Journal ArticleDOI
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
In-jun Hwang,Jongseob Kim,Hyuk Soon Choi,Hyoji Choi,Jaewon Lee,Kyung Yeon Kim,Jong-Bong Park,Jae Cheol Lee,Jong-Bong Ha,Jae-joon Oh,Jai-Kwang Shin,U-In Chung +11 more
TL;DR: In this paper, the impact of gate metals on the threshold voltage and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated.
Journal ArticleDOI
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the authors investigated the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor (HFET), and detailed electrical properties of the ungated and Schottky-gated portion of the device were investigated separately.
Journal ArticleDOI
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
TL;DR: In this paper, an enhancement mode AlGaN/GaN heterojunction field-effect transistor (HFET) with selectivity grown pn junction gate is presented, which enables both depletion and enhancement mode HFETs to be fabricated on the same wafer.
Journal ArticleDOI
Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs
Wataru Saito,Yorito Kakiuchi,Tomohiro Nitta,Yasunobu Saito,Takao Noda,Hidetoshi Fujimoto,Akira Yoshioka,Tetsuya Ohno,Masakazu Yamaguchi +8 more
TL;DR: In this paper, four types of field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in highvoltage GaN-HEMTs.
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