J
J. Frackoviak
Researcher at Alcatel-Lucent
Publications - 31
Citations - 519
J. Frackoviak is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Lithography & Resist. The author has an hindex of 10, co-authored 31 publications receiving 513 citations.
Papers
More filters
Proceedings ArticleDOI
The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length
J.M. Hergenrother,Don Monroe,F.P. Klemens,G. R. Weber,William M. Mansfield,M.R. Baker,Frieder H. Baumann,K. Bolan,J.E. Bower,N.A. Ciampa,R. Cirelli,J.I. Colonell,D. J. Eaglesham,J. Frackoviak,H.-J. Gossmann,Martin L. Green,Steven James Hillenius,C. A. King,Rafael N. Kleiman,W.Y.C. Lai,J.T.-C. Lee,R. Liu,H.L. Maynard,M.D. Morris,Sang Hyun Oh,C.S. Pai,Conor S. Rafferty,J. Rosamilia,T.W. Sorsch,H.-H. Vuong +29 more
TL;DR: In this article, the Vertical Replacement Gate (VRG) MOSFET was proposed, which combines a gate length controlled precisely through a deposited film thickness, independently of lithography and etch, and a high quality gate oxide grown on a single-crystal Si channel.
Proceedings ArticleDOI
Multiple gate oxide thickness for 2 GHz system-on-a-chip technologies
C.T. Liu,Yi Ma,M. Oh,Philip W. Diodato,K.R. Stiles,J.R. Mcmacken,F. Li,C.P. Chang,K.P. Cheung,J.I. Colonell,W.Y.C. Lai,R. Liu,E.J. Lloyd,J.F. Miner,C.S. Pai,Hem M. Vaidya,J. Frackoviak,Allen G. Timko,F.P. Klemens,H.L. Maynard,James T. Clemens +20 more
TL;DR: In this article, the authors investigated the nitrogen distribution profile in the oxide that is affected by the growth temperature, nitrogen implant dose, and post-oxidation annealing anneals.
Proceedings ArticleDOI
Single mask metal-insulator-metal (MIM) capacitor with copper damascene metallization for sub-0.18 /spl mu/m mixed mode signal and system-on-a-chip (SoC) applications
Ruichen Liu,Cheng-Yih Lin,E. Harris,S.M. Merchant,S.W. Downey,G. R. Weber,N.A. Ciampa,Wai Tai,W.Y.C. Lai,M.D. Morris,J.E. Bower,J.F. Miner,J. Frackoviak,W. Mansfield,D. Barr,R. Keller,Chong-Ping Chang,Chien-Shing Pai,S.N. Rogers,R.W. Gregor +19 more
TL;DR: In this paper, a one-mask metal-insulator-metal (MIM) capacitor using damascene Ca as the bottom electrode has been developed using a PECVD SiN as both the capacitor dielectric and the diffusion barrier for Cu.
Journal ArticleDOI
Stable low‐stress tungsten absorber technology for sub‐half‐micron x‐ray lithography
TL;DR: In this article, the microstructure and stress of sputter-deposited W films were studied using optical interferometry, scanning electron microscopy, transmission electron microscope, and x-ray diffraction.
Proceedings ArticleDOI
50 nm Vertical Replacement-Gate (VRG) pMOSFETs
Sang Hyun Oh,John Michael Hergenrother,T. Nigam,Don Monroe,F. Klemens,Avi Kornblit,William M. Mansfield,M.R. Baker,D. Barr,Frieder H. Baumann,K. Bolan,T. Boone,N.A. Ciampa,R. Cirelli,D. J. Eaglesham,E. Ferry,Anthony T. Fiory,J. Frackoviak,J. P. Garno,H.-J. Gossmann,J.L. Grazul,Martin L. Green,Steven James Hillenius,R.W. Johnson,R.C. Keller,C. A. King,Rafael N. Kleiman,J.T.-C. Lee,J.F. Miner,M.D. Morris,Conor S. Rafferty,J. Rosamilia,K. Short,T.W. Sorsch,Allen G. Timko,G. R. Weber,G.D. Wilk,James D. Plummer +37 more
TL;DR: In this paper, the first p-channel Vertical Replacement-Gate (VRG) MOSFETs with gate lengths of 100 nm and below are presented, and the VRG-pMOSFet is shown to be a successor to planar mOSFets for highly scaled ULSI.