T.W. Sorsch

TL;DR: In this article, a study was conducted to determine the efficacy of various underlayers for the nucleation and growth of atomic layer deposited HfO2 films, and the results showed that the use of a chemical oxide underlayer results in almost no barrier to film nucleation, enabling linear and predictable growth at constant film density.

TL;DR: In this article, the authors study the effect of gate noise on soft breakdown in high-quality 2-7 nm gate dielectrics and find that soft breakdown becomes more likely for thinner oxides and for oxides stressed at lower voltages.

TL;DR: In this article, the Vertical Replacement Gate (VRG) MOSFET was proposed, which combines a gate length controlled precisely through a deposited film thickness, independently of lithography and etch, and a high quality gate oxide grown on a single-crystal Si channel.

TL;DR: In this paper, the authors focus on the leading alternate gate dielectrics and why it is important to have an amorphous gate Dielectric such as aluminum oxide and silicon dioxide.

TL;DR: In this article, the authors demonstrate that I/sub Dsat/ deteriorates for gate oxides thicker or thinner than this, and they also show that the performance of sub-100 nm nMOSFETs deteriorates with gate oxide thickness of 1-2 nm.