A general model is introduced which is capable of making accurate, quantitative predictions about the phase noise of different types of electrical oscillators by acknowledging the true periodically time-varying nature of all oscillators. This new approach also elucidates several previously unknown design criteria for reducing close-in phase noise by identifying the mechanisms by which intrinsic device noise and external noise sources contribute to the total phase noise. In particular, it explains the details of how 1/f noise in a device upconverts into close-in phase noise and identifies methods to suppress this upconversion. The theory also naturally accommodates cyclostationary noise sources, leading to additional important design insights. The model reduces to previously available phase noise models as special cases. Excellent agreement among theory, simulations, and measurements is observed.

/pdf/a-general-theory-of-phase-noise-in-electrical-oscillators-a928ervz6d.pdf

A general theory of phase noise in electrical oscillators

We present several new simple and accurate expressions for the DC inductance of square, hexagonal, octagonal, and circular spiral inductors. We evaluate the accuracy of our expressions, as well as several previously published inductance expressions, in two ways: by comparison with three-dimensional field solver predictions and by comparison with our own measurements, and also previously published measurements. Our simple expression matches the field solver inductance values typically within around 3%, about an order of magnitude better than the previously published expressions, which have typical errors ground 20% (or more). Comparison with measured values gives similar results: our expressions (and, indeed, the field solver results) match within around 5%, compared to errors of around 20% for the previously published expressions. (We believe most of the additional errors in the comparison to published measured values is due to the variety of experimental conditions under which the inductance was measured.) Our simple expressions are accurate enough for design and optimization of inductors or of circuits incorporating inductors. Indeed, since inductor tolerance is typically on the order of several percent, "more accurate" expressions are not really needed in practice.

/pdf/simple-accurate-expressions-for-planar-spiral-inductances-3guvpwuxsn.pdf

Simple accurate expressions for planar spiral inductances

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Energy efficiency in cellular networks is a growing concern for cellular operators to not only maintain profitability, but also to reduce the overall environment effects. This emerging trend of achieving energy efficiency in cellular networks is motivating the standardization authorities and network operators to continuously explore future technologies in order to bring improvements in the entire network infrastructure. In this article, we present a brief survey of methods to improve the power efficiency of cellular networks, explore some research issues and challenges and suggest some techniques to enable an energy efficient or "green" cellular network. Since base stations consume a maximum portion of the total energy used in a cellular system, we will first provide a comprehensive survey on techniques to obtain energy savings in base stations. Next, we discuss how heterogenous network deployment based on micro, pico and femtocells can be used to achieve this goal. Since cognitive radio and cooperative relaying are undisputed future technologies in this regard, we propose a research vision to make these technologies more energy efficient. Lastly, we explore some broader perspectives in realizing a "green" cellular network technology.

Green Cellular Networks: A Survey, Some Research Issues and Challenges

Thank you for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their chosen books like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than enjoying a good book with a cup of coffee in the afternoon, instead they juggled with some harmful virus inside their computer. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library spans in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Kindly say, the design of analog cmos integrated circuits is universally compatible with any devices to read.

Design Of Analog Cmos Integrated Circuits

A time interval measuring system is disclosed. In one embodiment, the time interval measuring system includes a plurality of time interval analyzers, each having a resolution that differs from a resolution of at least one other time interval analyzer in the plurality of time interval analyzers. The plurality of time interval analyzers are configured to receive a first event signal representing a first event, receive a second event signal representing a second event, and generate digital first estimates representing a time difference between the first event and the second event. The time interval measuring system further includes a post-processing unit configured to receive the digital first estimates and combine the digital first estimates according to at least one algorithm to generate a digital second estimate representing the time difference between the first event and the second event having higher precision than each of the digital first estimates.

Time Interval Analyzing System and a Method Thereof

A design strategy for the realization of low-phase-noise VCOs is presented. The possible realizations of integrated inductors are discussed, with emphasis on bondwire inductors. A general formula for the phase noise in LC-tuned oscillators is derived, based on the concepts of effective resistance and capacitance. A trade-off between noise and power is possible with the newly developed enhanced LC-tanks. An oscillator based on these principles was implemented in a 0.7-μm CMOS technology. Measured phase noise is-85 dBc/Hz at 10 kHz from the 1.8-GHz carrier.

Low-phase-noise gigahertz voltage-controlled oscillators in CMOS

This paper presents an in-situ storage topology for ultra-high-speed burst mode imagers, enabling low noise operation while keeping a high frame depth. The proposed pixel architecture contains a 4T pinned photodiode, a correlated double sampling (CDS) amplification stage, and an in-situ memory bank. Focusing on the sampling noise, the system level trade-off of the proposed pixel architecture is discussed, showing its advantages on the noise, power, and scaling capability. Integrated with an AC coupling CDS stage, the amplification is obtained by exploiting the strong capacitance to the voltage relation of a single NMOS transistor. A comprehensive noise model is developed for optimizing the trade-off between the area and noise. As a proof-of-concept, a prototype imager with a 30 µm pixel pitch was fabricated in a CMOS 130 nm technology. A 108-cell memory bank is implemented allowing dense layout and parallel readout. Two types of CDS amplification stages were investigated. Despite the limited memory capacitance of 10 fF/cell, the photon transfer curves of both pixel types were measured over different operation speeds up to 20 Mfps showing a noise performance of 8.4 e-.

Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification.

This paper presents a 90 nm CMOS digital amplitude modulator for polar transmitter. It reaches an output power of -2.5 dBmRMS using a WLAN OFDM 64QAM modulation at 2.45GHz achieving -26.1 dB EVM and 18% efficiency. To reduce the aliases due to the discrete-time to continuous-time conversion a 2-fold interpolation has been implemented. The amplitude modulator has a segmented architecture. This results in a very compact 0.007 mm2 chip area.

A compact digital amplitude modulator in 90nm CMOS

Resent analog and RF circuits are increasing performance assisted by digital technology. This panel will demonstrate the potentials of this technology and discuss residual issues and potential solutions. Unlike conventional panels, this panel will not discuss explicit controversy such as A or B. The aim of this panel is to show recent new technology trend and to come out the real issues and potential solutions like tutorial session. Each panelist demonstrates the feature of digitally assisted analog and RF circuits followed by showing some residual issues in about 10 min and discuss the real issues and solutions with audiences.

Jan Craninckx

Papers

Time Interval Analyzing System and a Method Thereof

Low-phase-noise gigahertz voltage-controlled oscillators in CMOS

Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification.

A compact digital amplitude modulator in 90nm CMOS

Digitally assisted analog and RF circuits: Potentials and issues