Showing papers by "Jason R. Petta published in 2017"
TL;DR: In this article, the authors demonstrate an efficient resonantly-driven CNOT gate for electron spins in silicon, which achieves single-qubit rotations with fidelities >99%, as verified by randomized benchmarking.
Abstract: Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. While high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been a major challenge due to rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly-driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities >99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 ns. We use the CNOT gate to generate a Bell state with 75% fidelity, limited by quantum state readout. Our quantum dot device architecture opens the door to multi-qubit algorithms in silicon.
345 citations
TL;DR: In this article, the authors demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting.
Abstract: Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.
223 citations
TL;DR: In this article, electron spin resonance measurements of phosphorus donors localized in a 200μm −2 area below the inductive wire of a lumped element superconducting resonator were performed.
Abstract: We report on electron spin resonance measurements of phosphorus donors localized in a 200 μm^{2} area below the inductive wire of a lumped element superconducting resonator. By combining quantum limited parametric amplification with a low impedance microwave resonator design, we are able to detect around 2×10^{4} spins with a signal-to-noise ratio of 1 in a single shot. The 150 Hz coupling strength between the resonator field and individual spins is significantly larger than the 1-10 Hz coupling rates obtained with typical coplanar waveguide resonator designs. Because of the larger coupling rate, we find that spin relaxation is dominated by radiative decay into the resonator and dependent upon the spin-resonator detuning, as predicted by Purcell.
104 citations
TL;DR: In this paper, the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity.
Abstract: We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g c / 2 π = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.
89 citations
TL;DR: In this article, the authors show that a sizable coupling for a single electron spin is possible via spin charge hybridization using a magnetic field gradient in a silicon double quantum dot and predict optimal working points to achieve a coherent spin-photon coupling.
Abstract: The interaction of qubits via microwave frequency photons enables long-distance qubit-qubit coupling and facilitates the realization of a large-scale quantum processor. However, qubits based on electron spins in semiconductor quantum dots have proven challenging to couple to microwave photons. In this theoretical work we show that a sizable coupling for a single electron spin is possible via spin-charge hybridization using a magnetic field gradient in a silicon double quantum dot. Based on parameters already shown in recent experiments, we predict optimal working points to achieve a coherent spin-photon coupling, an essential ingredient for the generation of long-range entanglement. Furthermore, we employ input-output theory to identify observable signatures of spin-photon coupling in the cavity output field, which may provide guidance to the experimental search for strong coupling in such spin-photon systems and opens the way to cavity-based readout of the spin qubit.
84 citations
TL;DR: Using the cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intravalley tunnel couplings.
Abstract: We study an accumulation mode $\mathrm{Si}/\mathrm{SiGe}$ double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising the temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using the cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intravalley tunnel couplings.
79 citations
TL;DR: In this article, the authors demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting.
Abstract: Silicon is vital to the computing industry due to the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.
64 citations
TL;DR: In this article, a single atom maser consisting of a semiconductor double quantum dot (DQD) was demonstrated in a high-quality-factor microwave cavity, where a finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing.
Abstract: We demonstrate a single atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high-quality-factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account.
38 citations
TL;DR: This issue of ACS Nano, Tettamanzi et al. probe a single-atom transistor in silicon, fabricated using the precision of a STM, at microwave frequencies, which enables excited-state spectroscopy and measurements of the excited- state lifetime.
Abstract: Scanning tunneling microscopes (STMs) are conventionally used to probe surfaces with atomic resolution. Recent advances in STM include tunneling from spin-polarized and superconducting tips, time-domain spectroscopy, and the fabrication of atomically precise Si nanoelectronics. In this issue of ACS Nano, Tettamanzi et al. probe a single-atom transistor in silicon, fabricated using the precision of a STM, at microwave frequencies. While previous studies have probed such devices in the MHz regime, Tettamanzi et al. probe a STM-fabricated device at GHz frequencies, which enables excited-state spectroscopy and measurements of the excited-state lifetime. The success of this experiment will enable future work on quantum control, where the wave function must be controlled on a time scale that is much shorter than the decoherence time. We review two major approaches that are being pursued to develop spin-based quantum computers and highlight some recent progress in the atom-by-atom fabrication of donor-based devi...
12 citations
TL;DR: In this paper, the phase stabilization of a DQD single atom maser by injection locking was studied. But the phase of the maser output field was not analyzed, and the analysis was limited to a single-atom maser with phase noise of -99 dBc/Hz at a frequency offset of 1.3 MHz.
Abstract: We experimentally study the phase stabilization of a semiconductor double quantum dot (DQD) single atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise of -99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is ~8 kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime.
10 citations
TL;DR: In this article, the authors use microwave radiation generated by a semiconductor double quantum dot (DQD) micromaser for charge state detection, which requires no cavity input field and may potentially be used to improve the scalability of semiconductor and superconducting qubit readout technologies.
Abstract: We use microwave radiation generated by a semiconductor double quantum dot (DQD) micromaser for charge state detection. A cavity is populated with n_c ~ 6000 photons by driving a current through an emitter DQD. These photons are used to sense the charge state of a target DQD that is located at the opposite end of the cavity. Charge dynamics in the target DQD influence the output power and emission frequency of the maser. Three different readout mechanisms are compared. The detection scheme requires no cavity input field and may potentially be used to improve the scalability of semiconductor and superconducting qubit readout technologies.