Showing papers by "Jason S. Orcutt published in 2021"

Development of Quantum Interconnects (QuICs) for Next-Generation Information Technologies

Abstract: Just as classical information technology rests on a foundation built of interconnected information-processing systems, quantum information technology (QIT) must do the same. A critical component of such systems is the interconnect, a device or process that allows transfer of information between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in optical fiber, or microwave fields. While interconnects have been well engineered for decades in the realm of classical information technology, quantum interconnects (QuICs) present special challenges, as they must allow the transfer of fragile quantum states between different physical parts or degrees of freedom of the system. The diversity of QIT platforms (superconducting, atomic, solid-state color center, optical, etc.) that will form a quantum internet poses additional challenges. As quantum systems scale to larger size, the quantum interconnect bottleneck is imminent, and is emerging as a grand challenge for QIT. For these reasons, it is the position of the community represented by participants of the NSF workshop on Quantum Interconnects that accelerating QuIC research is crucial for sustained development of a national quantum science and technology program. Given the diversity of QIT platforms, materials used, applications, and infrastructure required, a convergent research program including partnership between academia, industry and national laboratories is required.

Laser-annealing Josephson junctions for yielding scaled-up superconducting quantum processors

Abstract: As superconducting quantum circuits scale to larger sizes, the problem of frequency crowding proves a formidable task. Here we present a solution for this problem in fixed-frequency qubit architectures. By systematically adjusting qubit frequencies post-fabrication, we show a nearly tenfold improvement in the precision of setting qubit frequencies. To assess scalability, we identify the types of “frequency collisions” that will impair a transmon qubit and cross-resonance gate architecture. Using statistical modeling, we compute the probability of evading all such conditions, as a function of qubit frequency precision. We find that, without post-fabrication tuning, the probability of finding a workable lattice quickly approaches 0. However, with the demonstrated precisions it is possible to find collision-free lattices with favorable yield. These techniques and models are currently employed in available quantum systems and will be indispensable as systems continue to scale to larger sizes.

Investigating microwave loss of SiGe using superconducting transmon qubits

Abstract: Silicon-germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to electro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here, we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 μs, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state-of-the-art performance of superconducting quantum circuits.

Investigating microwave loss of SiGe using superconducting transmon qubits

Abstract: Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 $\mu$s, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state of the art performance of superconducting quantum circuits.

Efficient photonic circuits for liquid-cooled high-density datacenters

Abstract: Photonic circuits are disclosed having an efficient optical power distribution network. Laser chips (InP) having different wavelengths are flip-chip assembled near the center of a silicon photonic chip. Each InP die has multiple optical lanes, but a given die has only one wavelength. Waveguides formed in the photonic chip are optically connected to the lanes, and fan out to form multiple waveguide sets, where each waveguide set has one of the waveguides from each of the different wavelengths, i.e., one waveguide from each InP die. The waveguide network is optimized to minimize the number of crossings that any given waveguide may have, and no waveguide having a particular wavelength crosses another waveguide of the same wavelength. The unique arrangements of light sources and waveguides allows the use of a smaller number of more intense laser sources, particularly in applications such as performance-optimized datacenters where liquid cooling systems may be leveraged.

Intracavity grating to suppress single order of ring resonator

Abstract: Microwave-to-optical transducers in an optical ring resonator having intracavity grating to split a single resonance order are provided. In one aspect, a microwave-to-optical transducer includes: an optical ring resonator with intracavity grating; and a microwave signal waveguide optically coupled to the optical ring resonator with the intracavity grating. Microwave-to-optical transducers having multiple pump photon optical ring resonators and multiple signal photon optical ring resonators optically coupled to the optical ring resonator with the intracavity grating are also provided, as is a method of forming a microwave-to-optical transducer, and a method for microwave-optical transduction.

Ultrahigh-$Q$ on-chip silicon-germanium microresonators.

Abstract: We demonstrate fully crystalline, single-mode ultrahigh quality factor integrated microresonators comprising epitaxially grown Si$_{0.86}$Ge$_{0.14}$ waveguide cores with silicon claddings. These waveguides support resonances with internal $Q >10^8$ for both polarization modes, a nearly order-of-magnitude improvement over that seen in prior integrated Si photonics platforms. The maximum $Q$ is $1.71\pm0.06 \times 10^8$ for the transverse magnetic (TM) polarization mode, corresponding to a loss of $0.39\pm0.02$ dB/m. Together with silicon's strong Kerr nonlinearity and low losses in the optical, microwave and acoustic regimes, our results could lead to the Si$_{1-x}$Ge$_x$/Si architecture unlocking important new avenues for Kerr frequency combs, optomechanics, and quantum transduction.