J
Jing Zhu
Researcher at Southeast University
Publications - 153
Citations - 1046
Jing Zhu is an academic researcher from Southeast University. The author has contributed to research in topics: Breakdown voltage & High voltage. The author has an hindex of 14, co-authored 149 publications receiving 826 citations.
Papers
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Patent
Transverse ultra-thin insulated gate bipolar transistor having high current density
TL;DR: In this paper, a transverse ultra-thin insulated gate bipolar transistor (TIGB) has been proposed to increase the current density of an intelligent power module, which significantly improves the performance of the power module.
Journal ArticleDOI
Electrical Characteristic Study of an SOI-LIGBT With Segmented Trenches in the Anode Region
Jing Zhu,Long Zhang,Weifeng Sun,Meng Chen,Feng Zhou,Minna Zhao,Longxing Shi,Yan Gu,Sen Zhang +8 more
TL;DR: In this article, the STA-LIGBT with segmented trenches in the anode (STA) region is presented, which accelerates the extraction of stored electrons during the device turn-off.
Journal ArticleDOI
Further Study of the U-Shaped Channel SOI-LIGBT With Enhanced Current Density for High-Voltage Monolithic ICs
Jing Zhu,Long Zhang,Weifeng Sun,Yicheng Du,Keqin Huang,Meng Chen,Longxing Shi,Yan Gu,Sen Zhang +8 more
TL;DR: In this article, a highvoltage silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT) with U-shaped channels, which are composed of parallel channels and orthogonal channels for improving the current density and latch-up immunity, is proposed and studied intensively.
Journal ArticleDOI
A Novel Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor With Dual Trenches for Three-Phase Single Chip Inverter ICs
Weifeng Sun,Jing Zhu,Long Zhang,Hui Yu,Yicheng Du,Keqin Huang,Shengli Lu,Longxing Shi,Yangbo Yi +8 more
TL;DR: A silicon-on-insulator lateral insulated gate bipolar transistor with dual trenches located under the high voltage interconnection, which can be used in 500 V three-phase single chip inverter ICs, is proposed in this paper.
Proceedings ArticleDOI
A high current density SOI-LIGBT with Segmented Trenches in the Anode region for suppressing negative differential resistance regime
TL;DR: In this article, a SOI-LIGBT with segmented trenches in the anode region (STA-LigBT) was proposed and compared with the separated shorted-anode LIGBT (SSA-LiggBT) for the first time, which achieved a current density (J C ) of 247 A/cm2 when the gate voltage is 10V and anode voltage is 3V.