Journal ArticleDOI
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Seyed Amir Ghetmiri,Wei Du,Joe Margetis,Aboozar Mosleh,Larry Cousar,Benjamin R. Conley,Lucas Domulevicz,Amjad Nazzal,Greg Sun,Richard A. Soref,John Tolle,Baohua Li,Hameed A. Naseem,Shui-Qing Yu +13 more
TLDR
In this paper, a temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line width was conducted for epitaxially grown Ge1−xSnx thin films on Si with Sn composition up to 10%.Abstract:
Material and optical characterizations have been conducted for epitaxially grown Ge1−xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample.read more
Citations
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Journal ArticleDOI
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
Sattar Al-Kabi,Seyed Amir Ghetmiri,Joe Margetis,Thach Pham,Yiyin Zhou,Wei Dou,Bria Collier,Randy Quinde,Wei Du,Wei Du,Aboozar Mosleh,Jifeng Liu,Greg Sun,Richard A. Soref,John Tolle,Baohua Li,Mansour Mortazavi,Hameed A. Naseem,Shui-Qing Yu +18 more
TL;DR: In this article, optically pumped GeSn edge-emitting lasers were grown on Si substrates and the whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process.
Journal ArticleDOI
Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
Joe Margetis,Sattar Al-Kabi,Wei Du,Wei Du,Wei Dou,Yiyin Zhou,Yiyin Zhou,Thach Pham,Thach Pham,Perry C. Grant,Perry C. Grant,Seyed Amir Ghetmiri,Aboozar Mosleh,Baohua Li,Jifeng Liu,Greg Sun,Richard A. Soref,John Tolle,Mansour Mortazavi,Shui-Qing Yu +19 more
TL;DR: In this paper, optically pumped GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors, achieving a maximum Sn composition of 17.5% exceeding the generally acknowledged Sn incorporation limits found with similar deposition chemistries.
Journal ArticleDOI
Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Yiyin Zhou,Yiyin Zhou,Wei Dou,Wei Du,Solomon Ojo,Huong Tran,Huong Tran,Seyed Amir Ghetmiri,Jifeng Liu,Greg Sun,Richard A. Soref,Joe Margetis,John Tolle,Baohua Li,Zhong Chen,Mansour Mortazavi,Shui-Qing Yu +16 more
TL;DR: In this article, an optically pumped GeSn laser based on both ridge and planar waveguide structures was demonstrated for near room temperature operation at 270 K with edge-emitting devices.
Journal ArticleDOI
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge(1-x)Sn(x) nanowires.
Subhajit Biswas,Jessica Doherty,Dzianis Saladukha,Quentin M. Ramasse,Dipanwita Majumdar,Moneesh Upmanyu,Achintya Singha,Tomasz J. Ochalski,Tomasz J. Ochalski,Michael A. Morris,Justin D. Holmes,Justin D. Holmes +11 more
TL;DR: The fabrication of uniform diameter, direct bandgap Ge1−xSnx alloy nanowires, with a Sn incorporation up to 9.2 at%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts is described.
Journal ArticleDOI
Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
Huong Tran,Wei Du,Seyed Amir Ghetmiri,Aboozar Mosleh,Greg Sun,Richard A. Soref,Joe Margetis,John Tolle,Baohua Li,Hameed A. Naseem,Shui-Qing Yu +10 more
TL;DR: In this paper, the absorption coefficient and refractive index of Ge1−xSnx alloys were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic ellipsometry at room temperature.
References
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Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).
Journal ArticleDOI
Achieving direct band gap in germanium through integration of Sn alloying and external strain
TL;DR: In this paper, a theoretical model was developed based on the nonlocal empirical pseudopotential method to determine the electronic band structure of germanium tin (GeSn) alloys, and modifications to the virtual crystal potential accounting for disorder induced potential fluctuations were incorporated to reproduce the large direct band gap bowing observed in GeSn alloys.
Journal ArticleDOI
Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
TL;DR: In this paper, the authors synthesize up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1−yAs buffer layers using molecular beam epitaxy.
Journal ArticleDOI
Ge–Sn semiconductors for band-gap and lattice engineering
M. Bauer,M. Bauer,J. Taraci,J. Taraci,J. Tolle,J. Tolle,Andrew Chizmeshya,Stefan Zollner,Stefan Zollner,David J. Smith,Jose Menendez,Changwu Hu,Changwu Hu,John Kouvetakis +13 more
TL;DR: In this paper, a class of Si-based semiconductors in the Ge1−xSnx system is described, which is completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry.
Journal ArticleDOI
TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
TL;DR: In this article, a new class of Sn-containing group IV semiconductors are described, which exhibit unprecedented thermal stability, superior crystallinity and unique optical and strain properties such as adjustable bandgaps, and controllable strain states.