J
Johann Peter Reithmaier
Researcher at University of Kassel
Publications - 451
Citations - 10456
Johann Peter Reithmaier is an academic researcher from University of Kassel. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 41, co-authored 436 publications receiving 9694 citations. Previous affiliations of Johann Peter Reithmaier include University of Würzburg & Siemens.
Papers
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Journal ArticleDOI
Heterodyne pump probe measurements of nonlinear dynamics in an indium phosphide photonic crystal cavity
Mikkel Heuck,Sylvain Combrié,Gaëlle Lehoucq,Stefania Malaguti,Gaetano Bellanca,Stefano Trillo,Philip Trøst Kristensen,Jesper Mørk,Johann Peter Reithmaier,A. De Rossi +9 more
TL;DR: In this paper, the carrier dynamics of an InP photonic crystal nanocavity were investigated using a sensitive two-color heterodyne pump-probe technique, which provided unambiguous results for all wavelength configurations, including the degenerate case, which cannot be investigated with the widely used homodyne technique.
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High-power 980 nm quantum dot broad area lasers
Bernd Sumpf,S. Deubert,G. Erbert,J. Fricke,Johann Peter Reithmaier,Alfred Forchel,R. Staske,Günther Tränkle +7 more
TL;DR: In this article, high-power quantum dot broad area laser emitting at 980 nm was achieved at 15/spl deg/C with an output power of 43 W from a 50 µm stripe width laser and 63 µm from a 100 µm beam width laser.
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Telecom wavelength single quantum dots with very small excitonic fine-structure splitting
TL;DR: In this article, the authors report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV.
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Deeply etched two-dimensional photonic crystals fabricated on GaAs/AlGaAs slab waveguides by using chemically assisted ion beam etching
TL;DR: In this paper, high quality two-dimensional photonic crystals were fabricated by electron-beam lithography and a combination of reactive ion etching and chemically assisted ion beam etching in GaAs/AlGaAs slab waveguides.
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High-Speed Low-Noise InAs/InAlGaAs/InP 1.55- $\mu{\rm m}$ Quantum-Dot Lasers
TL;DR: In this paper, the static and dynamic properties of InAs quantum-dot (QD) lasers emitting near 1.55 μm were presented, and the 4dB on/off ratio of the InAs QD laser was analyzed.