J
John B Ketterson
Researcher at Northwestern University
Publications - 823
Citations - 18004
John B Ketterson is an academic researcher from Northwestern University. The author has contributed to research in topics: Thin film & Superconductivity. The author has an hindex of 60, co-authored 814 publications receiving 16929 citations. Previous affiliations of John B Ketterson include University of Virginia & University of California, Los Angeles.
Papers
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Generation of arbitrary lithographic patterns using Bose-Einstein-condensate interferometry
TL;DR: In this article, a symmetric three-pulse Raman atom interferometer (AI) is used to implement a pattern lithography process using interference of Bose-Einstein condensates (BECs).
Book
Conventional and high-Tc superconductors
K H Bennemann,John B Ketterson +1 more
TL;DR: In this paper, a spin fluctuation model for d-wave superconductivity is proposed for tunneling spectroscopy of Conventional and Unconventional Superconductors, and pairing symmetry in Cuprate superconductors: Phase-Sensitive Tests.
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Acoustic anomalies in UPt 3 at high magnetic fields and low temperatures
TL;DR: In this paper, velocity and attenuation measurements were performed on single crystals of the heavy fermion compound (UPt) in magnetic fields up to 33 T and at temperatures ranging from 2.4 K to below 0.1 K.
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Perfect coupling of light to surface plasmons with ultra-narrow linewidths.
TL;DR: It is found that by adjusting the grating oscillation amplitude and fixing the relative phase of the incoming waves to be even or odd, T+R can be made to vanish for one or the other of the plasmon modes; this corresponds to perfect coupling (impedance matching in the language of electrical engineering) between the incoming light and these modes.
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Possible manifestation of Andreev bound states in double-barrier Nb/Al/AlOx/Al/AlOx/Nb tunnel junctions
TL;DR: In this article, the authors have experimentally investigated electron transport in double-barrier Nb/Al/AlO x /Al/Nb x /Nb devices and revealed a novel magnetic-field-sensitive subgap structure in the current-voltage characteristics.