J
John J. Pekarik
Researcher at GlobalFoundries
Publications - 98
Citations - 1338
John J. Pekarik is an academic researcher from GlobalFoundries. The author has contributed to research in topics: CMOS & Layer (electronics). The author has an hindex of 18, co-authored 93 publications receiving 1271 citations. Previous affiliations of John J. Pekarik include IBM.
Papers
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Proceedings ArticleDOI
Record RF performance of 45-nm SOI CMOS Technology
Sungjae Lee,Basanth Jagannathan,Shreesh Narasimha,Anthony I. Chou,Noah Zamdmer,J. Johnson,Richard Q. Williams,Lawrence F. Wagner,Jonghae Kim,Jean-Olivier Plouchart,John J. Pekarik,Scott K. Springer,Gregory G. Freeman +12 more
TL;DR: In this article, the authors report record RF performance in 45-nm silicon-on-insulator (SOI) CMOS technology and demonstrate that RF performance scaling with channel length and layout optimization is demonstrated.
Proceedings ArticleDOI
A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS
TL;DR: Efficiency of the PA is also paramount for portable consumer electronic applications operating from a battery, such as short-range Gb/s communication SoCs operating in the unlicensed bands around 60GHz.
Proceedings ArticleDOI
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
John J. Pekarik,James W. Adkisson,Peter B. Gray,Q.Z. Liu,Renata Camillo-Castillo,Marwan H. Khater,Vibhor Jain,Bjorn Zetterlund,Adam W. Divergilio,Xiaowei Tian,Aaron L. Vallett,John J. Ellis-Monaghan,Blaine J. Gross,Peng Cheng,V. Kaushal,Zhong-Xiang He,J. Lukaitis,K. Newton,M. Kerbaugh,N. Cahoon,Leonardo Vera,Yi Zhao,John R. Long,Alberto Valdes-Garcia,Scott K. Reynolds,Wooram Lee,Bodhisatwa Sadhu,David L. Harame +27 more
TL;DR: The electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line are presented.
Patent
Integrated circuit having pairs of parallel complementary FinFETs
Andres Bryant,William F. Clark,David M. Fried,Mark D. Jaffe,Edward J. Nowak,John J. Pekarik,Christopher S. Putnam +6 more
TL;DR: In this paper, a method and structure for an integrated circuit structure that utilizes complementary fin-type field effect transistors (FinFETs) is disclosed, which includes an insulator fin positioned between the source/drain regions (130) of the first first-type of FinFET and the second type of Fin-FET.
Journal ArticleDOI
A 150 GHz Amplifier With 8 dB Gain and $+$ 6 dBm $P_{\rm sat}$ in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines
TL;DR: A 150 GHz amplifier in digital 65 nm CMOS process is presented, with no dc-block capacitor, shunt-only tuning and radial stubs for ac ground, using dummy-prefilled microstrip lines as a compact, density-rule compliant matching element.