An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.

Transistor including a deposited channel region having a doped portion

A semiconductor device can include a channel including a first binary oxide and a second binary oxide.

Combined binary oxide semiconductor device

The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.

Tri-gate devices and methods of fabrication

This paper examines energy minimization for circuits operating in the subthreshold region. Subthreshold operation is emerging as an energy-saving approach to many energy-constrained applications where processor speed is less important. In this paper, we solve equations for total energy to provide an analytical solution for the optimum V/sub DD/ and V/sub T/ to minimize energy for a given frequency in subthreshold operation. We show the dependence of the optimum V/sub DD/ for a given technology on design characteristics and operating conditions. This paper also examines the effect of sizing on energy consumption for subthreshold circuits. We show that minimum sized devices are theoretically optimal for reducing energy. A fabricated 0.18-/spl mu/m test chip is used to compare normal sizing and sizing to minimize operational V/sub DD/ and to verify the energy models. Measurements show that existing standard cell libraries offer a good solution for minimizing energy in subthreshold circuits.

Modeling and sizing for minimum energy operation in subthreshold circuits

The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base highperformance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die multichannel wavelength-mulitplexed 25Gbps transceivers.

https://researcher.watson.ibm.com/researcher/files/us-yvlasov/assefa_IEDM_final.pdf

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

Disclosed herein are embodiments of a multiple fin fin-type field effect transistor (350) (i.e., a multiple fin dual-gate or tri-gate field effect transistor) (300, 300a, 300b) in which the multiple fins arc partially or completely merged by a highly conductive material (360a, 360b) (e.g., a metal suicide). Merging the fins in this manner allow series resistance to be minimized with little, if any, increase in the parasitic capacitance between the gate and source/drain regions (375a-b). Merging the semiconductor fins (350) in this manner also allows each of the source/drain regions (375a-b) to be contacted by a single contact via as well as more flexible placement of that contact via.

Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure

A double gated silicon-on-insulator (SOI) MOSFET is fabricated by using a mandrel shallow trench isolation formation process, followed by a damascene gate. The double gated MOSFET features narrow diffusion lines defined sublithographically or lithographically and shrunk, damascene process defined by an STI-like mandrel process. The double gated SOI MOSFET increases current drive per layout width and provides low out conductance.

Double planar gated SOI MOSFET structure

Summary form only given. This paper reports a CMOS inverter active power-delay product of less than 0.1 fJ/stage at 25/spl deg/C and at Vdd=0.1 V. We believe this is the lowest reported. This is accomplished by using a novel technique to match NFET and PFET subthreshold currents and, thus, enable operation of a standard 1.5 V 180 nm CMOS technology in subthreshold at very low Vdd. This technique uses voltage feedback to the MOSFET wells to match the NFET off current (Ioffn) and PFET off current (Ioffp), significantly enhancing the manufacturability of CMOS subthreshold logic.

Low-power CMOS at Vdd = 4kT/q

We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f T and 360 GHz f MAX high performance SiGe HBTs, 135 GHz f T and 2.5V BV CEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.

John J. Ellis-Monaghan

Papers

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure

Double planar gated SOI MOSFET structure

Low-power CMOS at Vdd = 4kT/q

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications