J
John W. Palmour
Researcher at Durham University
Publications - 209
Citations - 9172
John W. Palmour is an academic researcher from Durham University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 46, co-authored 202 publications receiving 8835 citations. Previous affiliations of John W. Palmour include Cree Inc. & Ioffe Institute.
Papers
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Journal ArticleDOI
Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
Journal ArticleDOI
Performance of 60 A, 1200 V 4H-SiC DMOSFETs
Brett Hull,Charlotte Jonas,Sei Hyung Ryu,Mrinal K. Das,Michael J. O'Loughlin,Fatima Husna,Robert Callanan,Jim Richmond,Anant K. Agarwal,John W. Palmour,Charles Scozzie +10 more
TL;DR: In this paper, a large area (8 mm x 7 mm) 1200 V 4H-SiC DMOSFETs with a specific on-resistance as low as 9 m•cm2 (at VGS = 20 V) able to conduct 60 A at a power dissipation of 200 W/cm2 are presented.
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12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
TL;DR: In this article, the DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.2 V at 25°C are demonstrated for the first time.
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High hole lifetime (3.8 [micro sign]s) in 4H-SiC diodes with 5.5 kV blocking voltage
Pavel Ivanov,M. E. Levinshtein,K.G. Irvine,O. Kordina,John W. Palmour,Sergey Rumyantsev,Ranbir Singh +6 more
TL;DR: In this paper, the hole lifetime of 4H-SiC diodes with 5.5 kV blocking voltage has been measured in the temperature range 300-550 K. The hole lifetime increases monotonically in this temperature range from 0.6 to 3.8 /spl mu/s.
Journal ArticleDOI
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
Sumi Krishnaswami,Anant K. Agarwal,James Richmond,Craig Capell,Sei-Hyung Ryu,John W. Palmour,Bruce Geil,Dimosthenis Katsis,Charles Scozzie +8 more
TL;DR: In this article, the authors presented 3200 V, 10 A BJT devices with a high common emitter current gain of 44 in the linear region and a specific on-resistance of 8.1 mΩ-cm2 (10 A at 0.90 V with a base current of 350 mA and an active area of 0.09 cm2).