J
John W. Palmour
Researcher at Durham University
Publications - 209
Citations - 9172
John W. Palmour is an academic researcher from Durham University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 46, co-authored 202 publications receiving 8835 citations. Previous affiliations of John W. Palmour include Cree Inc. & Ioffe Institute.
Papers
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Patent
Layout configurations for integrating schottky contacts into a power transistor device
TL;DR: In this paper, a bypass diode is formed by placing a Schottky metal contact on the first surface of the drift layer, such that each Schotty metal contact runs between two of the plurality of junction implants.
Journal ArticleDOI
High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
Journal ArticleDOI
Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
Joseph John Sumakeris,Mrinal K. Das,Seo Young Ha,Edward Hurt,Kenneth G. Irvine,Michael James Paisley,Michael J. O'Loughlin,John W. Palmour,Marek Skowronski,H. McD. Hobgood,Calvin H. Carter +10 more
TL;DR: In this article, a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices is presented, including epilayer uniformity and extended defect density.
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Temperature dependence of turn-on process in 4H-SiC thyristors
TL;DR: In this paper, the turn-on process in 4H-SiC thyristors with a forward blocking voltage U/sub h/spl sime/400 V was investigated in the temperature range 160-500 K.
Journal ArticleDOI
Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
TL;DR: In this article, a custom 3x150 mm horizontal hot-wall, SiC Vapor-Phase epitaxial growth reactor (VPE) with full planetary motion is reported, and the projected 5x5 mm useable area for layers of nominal 5 to 30 mm thickness for all the reactor configurations (as measured by a Candela CS2 optical surface analyzer) are approximately 92%, corresponding to an effective defect density of about 0.35 cm-2.