J
Jonathan Felbinger
Researcher at Cornell University
Publications - 12
Citations - 380
Jonathan Felbinger is an academic researcher from Cornell University. The author has contributed to research in topics: High-electron-mobility transistor & Diamond. The author has an hindex of 8, co-authored 12 publications receiving 351 citations. Previous affiliations of Jonathan Felbinger include Chalmers University of Technology & Booz Allen Hamilton.
Papers
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Journal ArticleDOI
Comparison of GaN HEMTs on Diamond and SiC Substrates
Jonathan Felbinger,M.V.S. Chandra,Yunju Sun,Lester F. Eastman,J. Wasserbauer,Firooz Faili,Dubravko Babic,Daniel Francis,Felix Ejeckam +8 more
TL;DR: In this paper, the performance of GaN/GaN high-electron-mobility transistors (HEMTs) on diamond and SiC substrates was examined, and GaN-on-diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz.
Comparison of GaN HEMTs on Diamond and SiC Substrates
Jonathan Felbinger,M.V.S. Chandra,Yunju Sun,Lester F. Eastman,J. Wasserbauer,Firooz Faili,Dubravko Babic,Daniel Francis,Felix Ejeckam +8 more
TL;DR: In this paper, the performance of GaN/GaN high-electron-mobility transistors (HEMTs) on diamond and SiC substrates was examined, and GaN-on-diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz.
Journal ArticleDOI
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
Quentin Diduck,Jonathan Felbinger,L.F. Eastman,Daniel Francis,J. Wasserbauer,Firooz Faili,Dubravko Babic,Felix Ejeckam +7 more
TL;DR: In this article, the performance of an AlGaN/GaN high electron mobility transistor (HEMT) on diamond substrate is reported, which exhibits fT=85 GHz and fmax=95 GHz.
Journal ArticleDOI
Wafer-scale GaN HEMT performance enhancement by diamond substrate integration
Glen D. Via,Jonathan Felbinger,John D. Blevins,Kelson D. Chabak,Gregg H. Jessen,James K. Gillespie,Robert C. Fitch,Antonio Crespo,Karynn A. Sutherlin,B. Poling,S. Tetlak,R. Gilbert,T. Cooper,Roland Baranyai,James W Pomeroy,Martin Kuball,J. J. Maurer,A. Bar-Cohen +17 more
TL;DR: In this paper, a wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and those fabricated in parallel on epitaxial layers from the GaN growth integrated with a diamond substrate is presented.
GaN-on-diamond field-effect transistors: from wafers to amplifier modules
Dubravko Babic,Quentin Diduck,P. Yenigalla,A. Schreiber,Daniel Francis,Firooz Faili,Felix Ejeckam,Jonathan Felbinger,L.F. Eastman +8 more
TL;DR: In this article, the development and issues related to fabrication, die processing, and packaging GaN-on-diamond high-electron mobility transistors into X-band amplifier modules are described.