J
J. Wasserbauer
Publications - 13
Citations - 505
J. Wasserbauer is an academic researcher. The author has contributed to research in topics: Diamond & Synthetic diamond. The author has an hindex of 8, co-authored 13 publications receiving 480 citations.
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Journal ArticleDOI
Comparison of GaN HEMTs on Diamond and SiC Substrates
Jonathan Felbinger,M.V.S. Chandra,Yunju Sun,Lester F. Eastman,J. Wasserbauer,Firooz Faili,Dubravko Babic,Daniel Francis,Felix Ejeckam +8 more
TL;DR: In this paper, the performance of GaN/GaN high-electron-mobility transistors (HEMTs) on diamond and SiC substrates was examined, and GaN-on-diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz.
Comparison of GaN HEMTs on Diamond and SiC Substrates
Jonathan Felbinger,M.V.S. Chandra,Yunju Sun,Lester F. Eastman,J. Wasserbauer,Firooz Faili,Dubravko Babic,Daniel Francis,Felix Ejeckam +8 more
TL;DR: In this paper, the performance of GaN/GaN high-electron-mobility transistors (HEMTs) on diamond and SiC substrates was examined, and GaN-on-diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz.
Journal ArticleDOI
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
Kelson D. Chabak,James K. Gillespie,V. Miller,Antonio Crespo,J.A. Roussos,M. Trejo,Dennis E. Walker,Glen D. Via,Gregg H. Jessen,J. Wasserbauer,Firooz Faili,Dubravko Babic,Daniel Francis,Felix Ejeckam +13 more
TL;DR: In this paper, the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs) on free-standing chemical-vapor-deposited (CVD) diamond substrate wafers were reported.
Proceedings ArticleDOI
AlGaN/GaN HEMT on Diamond Technology Demonstration
Gregg H. Jessen,James K. Gillespie,Glen D. Via,Antonio Crespo,D. Langley,J. Wasserbauer,Firooz Faili,Daniel Francis,Dubravko Babic,Felix Ejeckam,S. Guo,I. Eliashevich +11 more
TL;DR: In this article, a first report on the operation of AlGaN/GaN high-electron mobility transistors (HEMTs) atomically attached to a CVD diamond substrate is presented.
Journal ArticleDOI
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
Quentin Diduck,Jonathan Felbinger,L.F. Eastman,Daniel Francis,J. Wasserbauer,Firooz Faili,Dubravko Babic,Felix Ejeckam +7 more
TL;DR: In this article, the performance of an AlGaN/GaN high electron mobility transistor (HEMT) on diamond substrate is reported, which exhibits fT=85 GHz and fmax=95 GHz.