J
Jos E. M. Haverkort
Researcher at Eindhoven University of Technology
Publications - 106
Citations - 2205
Jos E. M. Haverkort is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum dot. The author has an hindex of 22, co-authored 101 publications receiving 1901 citations. Previous affiliations of Jos E. M. Haverkort include Leiden University.
Papers
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Journal ArticleDOI
Position-controlled [100] InP nanowire arrays
J Jia Wang,Sebastien Plissard,Moïra Hocevar,Tran Thanh Thuy Vu,Tilman Zehender,George Immink,Marcel A. Verheijen,Jos E. M. Haverkort,Erik P. A. M. Bakkers +8 more
TL;DR: In this paper, the growth of vertically standing zincblende InP nanowire arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy was investigated by electron beam lithography.
Journal ArticleDOI
Direct-bandgap emission from hexagonal Ge and SiGe alloys
Elham M. T. Fadaly,Alain Dijkstra,Jens Renè Suckert,Dorian Ziss,M. A. J. V. Tilburg,Chenyang Mao,Yizhen Ren,V. T. V. Lange,Ksenia Korzun,Sebastian Kölling,Sebastian Kölling,Marcel A. Verheijen,D. Busse,Claudia Rödl,Jürgen Furthmüller,Friedhelm Bechstedt,Julian Stangl,Jonathan J. Finley,Silvana Botti,Jos E. M. Haverkort,Erik P. A. M. Bakkers +20 more
TL;DR: Efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys is demonstrated, enabling electronic and optoelectronic functionalities to be combined on a single chip and in excellent quantitative agreement with ab initio theory.
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High-Efficiency Nanowire Solar Cells with Omnidirectionally Enhanced Absorption Due to Self-Aligned Indium–Tin–Oxide Mie Scatterers
Dick van Dam,Niels van Hoof,Y Yingchao Cui,Peter J. van Veldhoven,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers,Jaime Gómez Rivas,Jos E. M. Haverkort +7 more
TL;DR: The potential of semiconductor nanowires as nanostructures for the next generation of photovoltaic devices is unambiguously demonstrated by employing broadband forward scattering of self-aligned nanoparticles on top of the transparent top contact layer.
Journal ArticleDOI
Carrier capture into a semiconductor quantum well.
TL;DR: In this article, the authors experimentally observed an oscillating carrier capture time as a function of quantum well thickness, which correspond to a local capture time oscillating between 0.1 and 1.8 ps.
Journal ArticleDOI
Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
Elham M. T. Fadaly,Alain Dijkstra,Jens Renè Suckert,Dorian Ziss,M. A. J. V. Tilburg,C. Mao,Yizhen Ren,V. T. V. Lange,Sebastian Kölling,Marcel A. Verheijen,D. Busse,C. Rödl,Jürgen Furthmüller,Friedhelm Bechstedt,Julian Stangl,Jonathan J. Finley,Silvana Botti,Jos E. M. Haverkort,Erik P. A. M. Bakkers +18 more
TL;DR: In this article, the authors demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys, and demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range.