J
Jung-Wook Min
Researcher at King Abdullah University of Science and Technology
Publications - 66
Citations - 659
Jung-Wook Min is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Molecular beam epitaxy & Nanowire. The author has an hindex of 12, co-authored 58 publications receiving 421 citations. Previous affiliations of Jung-Wook Min include Gwangju Institute of Science and Technology.
Papers
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Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation
Haiding Sun,Davide Priante,Jung-Wook Min,Ram Chandra Subedi,Mohammad Khaled Shakfa,Zhongjie Ren,Kuang-Hui Li,Ronghui Lin,Chao Zhao,Tien Khee Ng,Jae-Hyun Ryou,Xixiang Zhang,Boon S. Ooi,Xiaohang Li +13 more
TL;DR: In this article, a novel nanowire structure adopting a graded-index separate confinement heterostructure (GRINSCH) in which the active region is sandwiched between two compositionally graded AlGaN layers, namely, a GRINSCH diode, is proposed.
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Efficient Light Absorption by GaN Truncated Nanocones for High Performance Water Splitting Applications.
Yeong Jae Kim,Gil Ju Lee,Seungkyu Kim,Jung-Wook Min,Sang Yun Jeong,Young Jin Yoo,Sanghan Lee,Young Min Song +7 more
TL;DR: In this paper, the authors presented GaN truncated nanocones to provide a strategy for improving solar water splitting efficiencies, compared to the efficiency provided by the conventional geometries (i.e., flat surface, cylindrical and cone shapes).
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Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen
TL;DR: In this article, the InGaN nanowires (NWs) were grown on a metallic Ti/Si template for improving the water splitting performance compared to a bare Si substrate, and the open circuit potential of the epitaxially grown NWs on metallic Ti was almost two times higher than when directly grown on the Si substrate.
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Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III-nitrides, III-oxides, and two-dimensional materials
Nasir Alfaraj,Jung-Wook Min,Chun Hong Kang,Abdullah A. Alatawi,Davide Priante,Ram Chandra Subedi,Malleswararao Tangi,Tien Khee Ng,Boon S. Ooi +8 more
TL;DR: In this paper, the authors provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which they criticize the status of sarspphire as a platform for efficient deep UV devices and detail advancements in device growth and fabrication.
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Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector
Yusin Pak,Yusin Pak,Somak Mitra,Naresh Alaal,Bin Xin,Sergei Lopatin,Dhaifallah R. Almalawi,Dhaifallah R. Almalawi,Jung-Wook Min,Hyojune Kim,Wan Sik Kim,Gun Young Jung,Iman S. Roqan +12 more
TL;DR: In this paper, an ideal p-n junction based on functionalizing n-type 2D-MoS2 with p-type quantum dots (QDs) was constructed for photoresponse enhancement.