Nasir Alfaraj

TL;DR: This work investigates the thin-film growth of a heterostructure stack comprised of n-type β-Ga2O3 and p-type cubic NiO layers grown consecutively on c-plane sapphire using pulsed laser deposition, as well as the fabrication of solar-blind ultraviolet-C photodetectors based on the resulting p-n junction heterodiodes.

TL;DR: In this article, a comprehensive review on the recent achievements made in the field of III-nitride nanowires is presented, along with their respective applications, including light-emitting diodes, lasers, photodetectors, and photoelectrodes.

TL;DR: In this paper, the photo-induced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent photoluminescence, and the photocarrier dynamics in the active regions were analyzed.

TL;DR: In this paper, the authors provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which they criticize the status of sarspphire as a platform for efficient deep UV devices and detail advancements in device growth and fabrication.

TL;DR: The proposed models of the channel attenuation coefficient (β) for a coastal environment and related ambient are well validated over the large variation of temperature and humidity over the FSO link in a coastal region and emulated indoor environment.