Junsin Yi

TL;DR: Investigation on the defect state of diborane (B2H6) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiO:H) films prepared using silane, hydrogen and nitrous oxide in a radio frequency plasma enhanced chemical vapor deposition (PECVD) system with different hydrogen dilutions indicates that the films are more useful for solar cell window layer.

TL;DR: In this article, the authors investigated indium tin oxide (ITO) as a front surface field (FSF) layer in a rear emitter SHJ solar cell, and they used numerical simulation starting from an experimentally obtained real solar cell.

TL;DR: In this article, the authors investigated various parameters such as the preferential GB etch, etch time, tin-doped indium-oxide (ITO) electrode, heat treatment, and emitter layer effect.

TL;DR: The results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

TL;DR: In this article, an n-type hydrogenated microcrystalline silicon oxide (μc-SiO:H) layer with high conductivity and beneficial optical properties for its application in SHJ solar cells was demonstrated.