J
Junsin Yi
Researcher at Sungkyunkwan University
Publications - 591
Citations - 7917
Junsin Yi is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Solar cell & Silicon. The author has an hindex of 35, co-authored 531 publications receiving 6431 citations. Previous affiliations of Junsin Yi include KAERI.
Papers
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Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer
Jayapal Raja,Kyungsoo Jang,Shahzada Qamar Hussain,Nagarajan Balaji,Somenath Chatterjee,S. Velumani,S. Velumani,Junsin Yi +7 more
TL;DR: In this article, a hybrid oxide TFTs fabricated using an interfacial layer of nanocrystalline Zr-doped InSnO (nc-ITO:Zr) and an amorphous InSnZnO films as an active channel is reported.
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Plasma etched PMMA/CaF2 anti-reflection coating for light weight PV module
TL;DR: In this article, the effects of the treated polymethylmethacrylate (PMMA) surface can be analyzed using different characterisation techniques and the results indicate the possibility of improving the surface morphology, optical and electrical characteristics of PMMA via treatment for photovoltaic applications.
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Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks
Kumar Mallem,S. V. Jagadeesh Chandra,Minkyu Ju,Subhajit Dutta,Swagata Phanchanan,Simpy Sanyal,Duy Phong Pham,Shahzada Qamar Hussain,Youngkuk Kim,Jinjoo Park,Young Hyun Cho,Eun-Chel Cho,Junsin Yi +12 more
TL;DR: In this paper, the effects of post deposition annealing (PDA) atmosphere, including oxygen (O2) gas and forming gas (FG), on interfacial and electrical properties of a HfO2 gate dielectric on nitrided Ge are analyzed.
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Influence of Annealing Temperature and Atmosphere on the Properties of ITO Films Deposited Using a Powdery Target
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Interfacial barrier height modification of indium tin oxide/a-Si:H(p) via control of density of interstitial oxygen for silicon heterojunction solar cell application
Shihyun Ahn,Sunbo Kim,Vinh Ai Dao,Seung Ho Lee,S.M. Iftiquar,Doyoung Kim,Shahzada Qamar Hussain,Hyeongsik Park,Jaehyeong Lee,Youngseok Lee,Jaehyun Cho,Sangho Kim,Junsin Yi +12 more
TL;DR: In this article, an indium tin oxide (ITO) film with low carrier concentration (n), high mobility (μ) and high work function (ΦITO), which is a beneficial material for the front electrode in heterojunction silicon (HJ) solar cells, was used to fabricate HJ solar cells.