Junsin Yi

TL;DR: Using a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% and the leakage current measured at VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated.

TL;DR: In this article, the authors presented transparent LiFx films with a wide optical bandgap and various thicknesses for the applications of SHJ solar cells, and the high-resolution transmission electron microscopic (HR-TEM) analysis was used to confirm the thickness of LiFX layers.

TL;DR: In this paper, the authors investigated the changes in boron-doped p-type silicon suboxide (SiOx) layers after carrier injection stress and found that the degradation of the p-layer can play an important role since it is directly related to the open circuit voltage (Voc) and fill factor (FF) in the cells.

TL;DR: In this paper, the electrical properties of metal-insulator-semiconductor (MIS) structure with AlON were analyzed using X-ray Photoelectron Spectroscopy (XPS).

TL;DR: In this article, the surface of indium tin oxide (ITO) in organic light emitting diodes (OLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors.