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Junsin Yi

Researcher at Sungkyunkwan University

Publications -  591
Citations -  7917

Junsin Yi is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Solar cell & Silicon. The author has an hindex of 35, co-authored 531 publications receiving 6431 citations. Previous affiliations of Junsin Yi include KAERI.

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Transparent conductor-embedding nanocones for selective emitters: optical and electrical improvements of Si solar cells.

TL;DR: Periodical nanocone-arrays were employed in an emitter region for high efficient Si solar cells to satisfy optical and electrical improvement and achieve a record high efficiency of 16.3% for the periodically nanoscale patterned emitter Si solar cell.
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Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films

TL;DR: In this paper, the effects of the thickness of indium films and the annealing temperature on structural, optical and electrical properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated.
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Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs

TL;DR: Effect of short-channel induced instabilities in InSnZnO-based thin-film transistors (TFTs) caused by combination of the drain induced barrier lowering (DIBL) and parasitic resistance is reported.
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Stability of SiNX/SiNX double stack antireflection coating for single crystalline silicon solar cells

TL;DR: The stability tests are conducted using various forms of stress, such as prolonged thermal cycle, humidity, and UV exposure and confirmed that the double stack antireflection coating is stable against external stress.
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Superstrate p-i-n a-Si:H solar cells on textured ZnO:Al front transparent conduction oxide

TL;DR: In this article, the effect of TCO/p-layer layers on a-Si:H solar cell operation was investigated on textured textured ZnO:Al transparent conducting oxides (TCO) and showed that the polysilicon solar cells with the TCO layer achieved a high open circuit voltage of 994mV while keeping the fill factor (72.7%) and short circuit current density (Jsc) at the same level as for the cells on SnO2:F TCO.