J
Junsin Yi
Researcher at Sungkyunkwan University
Publications - 591
Citations - 7917
Junsin Yi is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Solar cell & Silicon. The author has an hindex of 35, co-authored 531 publications receiving 6431 citations. Previous affiliations of Junsin Yi include KAERI.
Papers
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Morphological, Dielectric, and Impedance Study of Ag-Coated Lead Oxide–Lignocellulose Composite Sheets for Energy Storage and Tunable Electric Permittivity Applications
Ali Raza,Ishrat Sultana,Aneeqa Bashir,Shahzada Qamar Hussain,Z. Ullah,S.H. M Jafri,Naveed Ul Haq,Shahid Atiq,Youngkuk Kim,Eun-Chel Cho,Junsin Yi,Aamir Razaq +11 more
TL;DR: In this article , the morphological, dielectric, and impedance properties of lignocellulose-lead oxide composite sheets electrodeposited with silver metallic nanoparticles for various time spans were presented.
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In Situ Process to Form Passivated Tunneling Oxides for Front-Surface Field in Rear-Emitter Silicon Heterojunction Solar Cells
Sunhwa Lee,Thanh Thuy Trinh,Duy Phong Pham,Sangho Kim,Youngkuk Kim,Jinjoo Park,Nguyen Dang Nam,Vinh Ai Dao,Junsin Yi +8 more
TL;DR: In this paper, a novel approach involving CO2 plasma treatment of intrinsic hydrogenated amorphous silicon was developed to form ultrathin silicon oxide (SiOx) layers, that is, passivated tunneling layers (PTLs), for the fabrication of passivating tunneling contacts.
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Photoenergy: Progress in Si-Related Solar Cells for a Low Cost and High Efficiency
TL;DR: In this article, the authors presented the results of a study conducted at Sungkyunkwan University in South Korea, where the authors used the Fraunhofer-Allianz Energie (FAE) and HeidenhofstrBe 2, 79110 Freiburg, Germany as their research site.
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Improving Device Efficiency for n-i-p Type Solar Cells with Various Optimized Active Layers
Sk Md Iftiquar,Junsin Yi +1 more
TL;DR: In this article, the authors investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells and showed that an optimized device structure is needed to get the best device output.
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Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Oxide films and Its Application to Amorphous Silicon Solar Cells
Jinjoo Park,Youngkuk Kim,S.-B. Lee,Youn-Jung Lee,Junsin Yi,Shahzada Qamar Hussain,Nagarajan Balaji +6 more
TL;DR: In this paper, diborane doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films were prepared by using silane hydrogen and nitrous oxide in a radio frequency enhanced chemical vapor deposition (PECVD) system.