Katarzyna Holc

TL;DR: In this paper, a flexible GaN-based micro-LED array was used as an optical cochlear implant for application in a mouse model, where the fabrication of 15 µm thin and highly flexible devices is enabled by a laser-based layer transfer process of the GaNLEDs from sapphire to a polyimide-on-silicon carrier wafer.

TL;DR: In this article, the authors demonstrate an InGaN laser diode, in which the waveguiding quality of the device is improved by the introduction of highly doped (plasmonic) layer constituting an upper part of the GaN substrate.

TL;DR: In this article, the authors demonstrate the operation of high-power InGaN laser diode "mini-arrays" consisting of three or five stripes in a common p-contact configuration and compare the results with a single stripe emitter.

TL;DR: In this paper, the intrinsic stress gradient caused by the growing inplane grain size along film thickness was minimized by increasing the N 2 concentration in the Ar/N 2 gas mixture during the growth process.

TL;DR: In this article, the temperature dependence of electroluminescence in superluminescent light emitting diode InGaN structures emitting light at 405 nm was studied and it was shown that the main temperature dependence is related to the spontaneous emission factor in the amplified spontaneous emission.