K
Kenchi Ito
Researcher at Hitachi
Publications - 85
Citations - 2842
Kenchi Ito is an academic researcher from Hitachi. The author has contributed to research in topics: Magnetization & Magnetoresistance. The author has an hindex of 26, co-authored 85 publications receiving 2752 citations. Previous affiliations of Kenchi Ito include Tohoku University & HGST.
Papers
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Journal ArticleDOI
Spin-transfer torque RAM technology: Review and prospect
TL;DR: This paper reviews the development of MTJ device technology and formulates considerations regarding its memory application, including SPRAM memory cell structure and operation, write voltage limitation, and thermal stability.
Journal ArticleDOI
Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: stochastic versus deterministic aspects.
Thibaut Devolder,Jun Hayakawa,Kenchi Ito,Hiromasa Takahashi,Shoji Ikeda,P. Crozat,N. Zerounian,Joo-Von Kim,Claude Chappert,Hideo Ohno +9 more
TL;DR: Using high bandwidth resistance measurements, the single-shot response of tunnel junctions subjected to spin torque pulses is studied and the time-resolved resistance traces indicate micromagnetic configurations that are rather spatially coherent.
Proceedings Article
2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read
Takayuki Kawahara,Riichiro Takemura,Katsuya Miura,Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Y. Goto,Kenchi Ito,Toshiyasu Meguro,F. Matsukura,Hiromasa Takahashi,Hideyuki Matsuoka,Hideo Ohno +13 more
TL;DR: A 1.8 V 2 Mb SPin-transfer torque RAM (SPRAM) chip using a 0.2 mum logic process with an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power nonvolatile RAM, or universal memory.
Journal ArticleDOI
2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read
Takayuki Kawahara,Riichiro Takemura,Katsuya Miura,Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Y. Goto,Kenchi Ito,Toshiyasu Meguro,F. Matsukura,Hiromasa Takahashi,Hideyuki Matsuoka,Hideo Ohno +13 more
TL;DR: In this article, a 1.8 V 2 Mb SPin-transfer torque RAM (SPRAM) chip using a 0.2 mum logic process with an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power nonvolatile RAM, or universal memory.
Journal ArticleDOI
Development of half-metallic ultrathin Fe3O4 films for spin-transport devices
Susumu Soeya,Jun Hayakawa,Hiromasa Takahashi,Kenchi Ito,Chisato Yamamoto,A. Kida,Hidefumi Asano,Masaaki Matsui +7 more
TL;DR: In this paper, a high-quality Fe3O4 film was fabricated on a MgO (100) substrate and the saturation magnetization, resistivity, and Verwey point were measured.