K
Kenta Arima
Researcher at Osaka University
Publications - 127
Citations - 1556
Kenta Arima is an academic researcher from Osaka University. The author has contributed to research in topics: Etching (microfabrication) & Chemical-mechanical planarization. The author has an hindex of 20, co-authored 120 publications receiving 1263 citations.
Papers
More filters
Journal ArticleDOI
Single-nanometer focusing of hard x-rays by Kirkpatrick–Baez mirrors
Kazuto Yamauchi,Hidekazu Mimura,Takashi Kimura,Hirokatsu Yumoto,Soichiro Handa,Satoshi Matsuyama,Kenta Arima,Yasuhisa Sano,Kazuya Yamamura,Koji Inagaki,Hiroki Nakamori,Jangwoo Kim,Kenji Tamasaku,Yoshinori Nishino,Makina Yabashi,Tetsuya Ishikawa +15 more
TL;DR: An at-wavelength wavefront error sensing method based on x-ray interferometry and an in situ phase compensator mirror, which adaptively deforms with nanometer precision, were developed to satisfy the Rayleigh criterion to achieve diffraction-limited focusing in a single-nanometer range.
Journal ArticleDOI
Novel abrasive-free planarization of 4H-SiC (0001) using catalyst
Hideyuki Hara,Yasuhisa Sano,Hidekazu Mimura,Kenta Arima,Akihisa Kubota,Keita Yagi,Junji Murata,Kazuto Yamauch +7 more
TL;DR: In this article, a new abrasive-free planarization method for silicon carbide (SiC) wafers was proposed using the catalytic nature of platinum (Pt).
Journal ArticleDOI
Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
Akinobu Teramoto,Tatsufumi Hamada,Masashi Yamamoto,Philippe Gaubert,Hiroshi Akahori,K. Nii,M. Hirayama,Kenta Arima,Katsuyoshi Endo,Shigetoshi Sugawa,Tadahiro Ohmi +10 more
TL;DR: In this paper, a flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room temperature cleaning as a pregate-oxidation cleaning.
Journal ArticleDOI
Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst
Kenta Arima,Hideyuki Hara,Junji Murata,Takeshi Ishida,Ryota Okamoto,Keita Yagi,Yasuhisa Sano,Hidekazu Mimura,Kazuto Yamauchi +8 more
TL;DR: In this article, the authors presented a method for flattening SiC surfaces with Pt as a catalyst in HF solution, and discussed the mechanism of flattening the SiC surface with Pt.
Journal ArticleDOI
Catalyst‐referred etching of 4H ? SiC substrate utilizing hydroxyl radicals generated from hydrogen peroxide molecules
Keita Yagi,Junji Murata,Akihisa Kubota,Yasuhisa Sano,Hideyuki Hara,Takeshi Okamoto,Kenta Arima,Hidekazu Mimura,Kazuto Yamauchi +8 more
TL;DR: In this article, a new environmentally friendly planarization technique for 4H-silicon carbide (SiC) substrates is described, which uses hydroxyl (OH) radicals generated from hydrogen peroxide (H 2 O 2 ) molecules.