This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMs

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

https://iopscience.iop.org/article/10.1088/0034-4885/75/7/076502/pdf

Emerging memories: resistive switching mechanisms and current status.

One of the most frequently used methods for characterizing thin films is UV–Vis absorption. The near-edge region can be fitted to a simple expression in which the intercept gives the band-gap and the fitting exponent identifies the electronic transition as direct or indirect (see Tauc et al., Phys. Status Solidi 15, 627 (1966); these are often called “Tauc” plots). While the technique is powerful and simple, the accuracy of the fitted band-gap result is seldom stated or known. We tackle this question by refitting a large number of Tauc plots from the literature and look for trends. Nominally pure zinc oxide (ZnO) was chosen as a material with limited intrinsic deviation from stoichiometry and which has been widely studied. Our examination of the band gap values and their distribution leads to a discussion of some experimental factors that can bias the data and lead to either smaller or larger apparent values than would be expected. Finally, an easily evaluated figure-of-merit is defined that may help guide more accurate Tauc fitting. For samples with relatively sharper Tauc plot shapes, the population yields Eg(ZnO) as 3.276 ± 0.033 eV, in good agreement with data for single crystalline material.

Evaluation of the Tauc method for optical absorption edge determination: ZnO thin films as a model system

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

/pdf/metal-oxide-semiconductor-thin-film-transistors-for-flexible-16f7s8g8at.pdf

Metal oxide semiconductor thin-film transistors for flexible electronics

MicroRNA exhibits differential expression levels in cancer and can affect cellular transformation, carcinogenesis and metastasis. Although fluorescence techniques using dye molecule labels have been studied, label-free molecular-level quantification of miRNA is extremely challenging. We developed a surface plasmon resonance sensor based on two-dimensional nanomaterial of antimonene for the specific label-free detection of clinically relevant biomarkers such as miRNA-21 and miRNA-155. First-principles energetic calculations reveal that antimonene has substantially stronger interaction with ssDNA than the graphene that has been previously used in DNA molecule sensing, due to thanking for more delocalized 5s/5p orbitals in antimonene. The detection limit can reach 10 aM, which is 2.3-10,000 times higher than those of existing miRNA sensors. The combination of not-attempted-before exotic sensing material and SPR architecture represents an approach to unlocking the ultrasensitive detection of miRNA and DNA and provides a promising avenue for the early diagnosis, staging, and monitoring of cancer.

/pdf/ultrasensitive-detection-of-mirna-with-an-antimonene-based-it7gneep0z.pdf

Ultrasensitive detection of miRNA with an antimonene-based surface plasmon resonance sensor.

Surface Plasmon Resonance Optical Sensor: A Review on Light Source Technology

Charge trapping characteristics of high-relative permittivity (high-?) HfO2 films with Al2O3 as a blocking oxide in p-Si/SiO2/HfO2/Al2O3/metal memory structures have been investigated. All high-? films have been grown by atomic layer deposition. A transmission electron microscope image shows that the HfO2 film is polycrystalline, while the Al2O3 film is partially crystalline after a high temperature annealing treatment at 1000 ?C for 10 s in N2 ambient. A well-behaved counter-clockwise capacitance?voltage hysteresis has been observed for all memory capacitors. A large memory window of ~7.4 V and a high charge trapping density of ~1.1 ? 1013 cm?2 have been observed for high-? HfO2 charge trapping memory capacitors. The memory window and charge trapping density can be increased with increasing thickness of the HfO2 film. The charge loss can be decreased using a thick trapping layer or thick tunnelling oxide. A high work function metal gate electrode shows low charge loss and large memory window after 10 years of retention. High-? HfO2 memory devices with high-? Al2O3 as a blocking oxide and a high work function metal gate can be used in future high-density non-volatile memory device applications.

https://iopscience.iop.org/article/10.1088/0268-1242/22/8/010/pdf

Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films

This work develops a highly sensitive immunoassay sensor for use in graphene oxide sheet (GOS)-based surface plasmon resonance (SPR) chips. This sensing film, which is formed by chemically modifying a GOS surface, has covalent bonds that strongly interact with the bovine serum albumin (BSA), explaining why it has a higher sensitivity. This GOS film-based SPR chip has a BSA concentration detection limit that is 100 times higher than that of the conventional Au-film-based sensor. The affinity constants (KA) on the GOS film-based SPR chip and the conventional SPR chip for 100 μg/ml BSA are 80.82 × 106 M-1 and 15.67 × 106 M-1, respectively. Therefore, the affinity constant of the GOS film-based SPR chip is 5.2 times higher than that of the conventional chip. With respect to the protein-protein interaction, the SPR sensor capability to detect angle changes at a low concentration anti-BSA of 75.75 nM on the GOS film-based SPR chip and the conventional SPR chip is 36.1867 and 26.1759 mdeg, respectively. At a high concentration, anti-BSA of 378.78 nM on the GOS film-based SPR chip and the conventional SPR chip reveals two times increases in the SPR angle shift. Above results demonstrate that the GOS film is promising for highly sensitive clinical diagnostic applications.

/pdf/graphene-oxide-based-spr-biosensor-chip-for-immunoassay-mvjp3tu0ss.pdf

Kou-Chen Liu

Papers

Surface Plasmon Resonance Optical Sensor: A Review on Light Source Technology

Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films

Graphene oxide-based SPR biosensor chip for immunoassay applications

The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device