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Kris Vanstreels

Researcher at Katholieke Universiteit Leuven

Publications -  107
Citations -  1944

Kris Vanstreels is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 20, co-authored 102 publications receiving 1661 citations. Previous affiliations of Kris Vanstreels include IMEC & University of Hasselt.

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Journal ArticleDOI

Metal-Organic Framework ZIF-8 Films As Low-κ Dielectrics in Microelectronics

TL;DR: ZIF-8 films were deposited on silicon wafers and characterized to assess their potential as future insulators (low-κ dielectrics) in microelectronics Scanning electron microscopy and gas adsorption monitored by spectroscopic ellipsometry confirmed the good coalescence of the crystals, the absence of intergranular voids, and the hydrophobicity of the pores Mechanical properties were assessed by nanoindentation and tape tests, confirming sufficient rigidity for chip manufacturing processes and the good adhesion to the support as mentioned in this paper.
Patent

Fabrication of porogen residues free and mechanically robust low-k materials

TL;DR: In this article, a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa is presented.
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Soft, Comfortable Polymer Dry Electrodes for High Quality ECG and EEG Recording

TL;DR: Dry electrodes offering high user comfort are presented, since they are fabricated from EPDM rubber containing various additives for optimum conductivity, flexibility and ease of fabrication, and EEG recordings using active polymer electrodes connected to a clinical EEG system show very promising results.
Journal ArticleDOI

Cu pumping in TSVs: Effect of pre-CMP thermal budget

TL;DR: It is shown that to suppress Cu pumping a pre-CMP anneal is required that is either very long or at a temperature very close to the maximum temperature used in the BEOL processing.
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Influence of annealing conditions on the mechanical and microstructural behavior of electroplated Cu-TSV

TL;DR: In this article, the effect of annealing condition on the microstructural and mechanical behavior of copper through-silicon via (Cu-TSV) is studied, with the average hardness values of 1.9 GPa, 2.2 GPa and 2.8 GPa respectively for the annealed, room temperature (RT) aged and the as-deposited samples.